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CORC

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Analytical subthreshold current modeling of nanoscale ultra-thin body ultra-thin box SOI MOSFETs with a vertical gaussian doping profile 会议论文
作者:  Wei, Sufen;  Zhang, Guohe;  Huang, Huixiang;  Liu, Jing;  Shao, Zhibiao
收藏  |  浏览/下载：6/0  |  提交时间：2019/11/19
The impact of heat loss paths on the electrothermal models of self-heating effects in nanoscale tri-gate SOI MOSFETs 期刊论文
IEICE ELECTRONICS EXPRESS, 2018, 卷号: 15
作者:  Su, Yali;  Lai, Junhua;  Liang, Feng
收藏  |  浏览/下载：2/0  |  提交时间：2019/11/26
On the Physical Modeling of Random Telegraph Noise (RTN) Amplitude in Nanoscale MOSFETs: From Ideal to Statistical Devices 其他
2017-01-01
Zhang, Zexuan; Guo, Shaofeng; Zhang, Zhe; Wang, Runsheng; Huang, Ru
收藏  |  浏览/下载：8/0  |  提交时间：2017/12/03
Anomalous random telegraph noise in nanoscale transistors as direct evidence of two metastable states of oxide traps 期刊论文
SCIENTIFIC REPORTS, 2017
Guo, Shaofeng; Wang, Runsheng; Mao, Dongyuan; Wang, Yangyuan; Huang, Ru
收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03
Experimental Investigation of Ballistic Carrier Transport for Sub-100-nm Ge n-MOSFETs 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2017
Cheng, Ran; Yin, Longxiang; Wu, Heng; Yu, Xiao; Zhang, Yanyan; Zheng, Zejie; Wu, Wangran; Chen, Bing; Ye, Peide D.; Liu, Xiaoyan; Zhao, Yi
收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03
Band Offsets and Interfacial Properties of HfAlO Gate Dielectric Grown on InP by Atomic Layer Deposition 期刊论文
NANOSCALE RESEARCH LETTERS, 2017, 卷号: 12, 页码: -
作者:  Yang, LF;  Wang, T;  Zou, Y;  Lu, HL
收藏  |  浏览/下载：17/0  |  提交时间：2017/12/08
Investigation of transient responses of nanoscale transistors by deterministic solution of the time-dependent BTE 其他
2016-01-01
Di, Shaoyan; Zhao, Kai; Lu, Tiao; Du, Gang; Liu, Xiaoyan
收藏  |  浏览/下载：6/0  |  提交时间：2017/12/03
Too Noisy at the Nanoscale?-The Rise of Random Telegraph Noise (RTN) in Devices and Circuits 其他
2016-01-01
Wang, Runsheng; Guo, Shaofeng; Ren, Pengpeng; Luo, Mulong; Zou, Jibin; Hang, Ru
收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03
Investigation on the Amplitude of Random Telegraph Noise(RTN) in Nanoscale MOSFETs——Scaling Limit of “Hole in the Inversion Layer” Model 其他
2016-01-01
Zexuan Zhang; Zhe Zhang; Shaofeng Guo; Runsheng Wang; Xingsheng Wang; Binjie Cheng; Ru Huang
收藏  |  浏览/下载：3/0  |  提交时间：2017/12/03
On the Assessment of End-of-Life Variability induced by Stochastic NBTI in Nanoscale MOSFETs Accompanying Conspicuous RTN 其他
2016-01-01
Tao Sun; Runsheng Wang; Pengpeng Ren; Xiaobo Jiang; Ru Huang
收藏  |  浏览/下载：6/0  |  提交时间：2017/12/03

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