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	Investigation on the Amplitude of Random Telegraph Noise(RTN) in Nanoscale MOSFETs——Scaling Limit of “Hole in the Inversion Layer” Model; Investigation on the Amplitude of Random Telegraph Noise(RTN) in Nanoscale MOSFETs——Scaling Limit of “Hole in the Inversion Layer” Model
	Zexuan Zhang ; Zhe Zhang ; Shaofeng Guo ; Runsheng Wang ; Xingsheng Wang ; Binjie Cheng ; Ru Huang
	2016
关键词	Inversion equivalence drain Model RTN negligible helpful scaled assumed scaling Inversion equivalence drain Model RTN negligible helpful scaled assumed scaling
英文摘要	In this paper, the widely adopted "hole in the inversion layer"(HIL) model for predicting the amplitude of random telegraph noise(RTN) in nanoscale MOSFETs,is theoretically revisited with focusing on its scaling limit and validation range. It is found that this simple physical model fail to apply on ultra-scaled devices with L<20nm and/or W<10nm, due to the non-negligible impact from source/drain and the failure of assumed equivalence to resistor network in ultra-scaled devices.This work provides a deeper understanding to this model and is helpful for accurate prediction of RTN amplitude in nanoscale devices and circuits.; In this paper, the widely adopted "hole in the inversion layer"(HIL) model for predicting the amplitude of random telegraph noise(RTN) in nanoscale MOSFETs,is theoretically revisited with focusing on its scaling limit and validation range. It is found that this simple physical model fail to apply on ultra-scaled devices with L<20nm and/or W<10nm, due to the non-negligible impact from source/drain and the failure of assumed equivalence to resistor network in ultra-scaled devices.This work provides a deeper; IEEE Beijing Section; 3
语种	英语
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/479801]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Zexuan Zhang,Zhe Zhang,Shaofeng Guo,et al. Investigation on the Amplitude of Random Telegraph Noise(RTN) in Nanoscale MOSFETs——Scaling Limit of “Hole in the Inversion Layer” Model, Investigation on the Amplitude of Random Telegraph Noise(RTN) in Nanoscale MOSFETs——Scaling Limit of “Hole in the Inversion Layer” Model. 2016-01-01.

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