| Too Noisy at the Nanoscale?-The Rise of Random Telegraph Noise (RTN) in Devices and Circuits | |
| Wang, Runsheng ; Guo, Shaofeng ; Ren, Pengpeng ; Luo, Mulong ; Zou, Jibin ; Hang, Ru | |
| 2016 | |
| 关键词 | Random telegraph noise (RTN) MOSFET VARIABILITY RELIABILITY MOSFETS IMPACT |
| 英文摘要 | This paper gives an outline of our recent findings on the random telegraph noise (RTN) in nanoscale MOS devices and circuits.; CPCI-S(ISTP); r.wang@pku.edu.cn |
| 语种 | 英语 |
| 出处 | 7th IEEE International Nanoelectronics Conference |
| 内容类型 | 其他 |
| 源URL | [http://ir.pku.edu.cn/handle/20.500.11897/460107]  |
| 专题 | 信息科学技术学院 |
| 推荐引用方式 GB/T 7714 | Wang, Runsheng,Guo, Shaofeng,Ren, Pengpeng,et al. Too Noisy at the Nanoscale?-The Rise of Random Telegraph Noise (RTN) in Devices and Circuits. 2016-01-01. |
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