Band Offsets and Interfacial Properties of HfAlO Gate Dielectric Grown on InP by Atomic Layer Deposition

doi:10.1186/s11671-017-2104-y

CORC > 上海应用物理研究所 > 中国科学院上海应用物理研究所 > 中科院上海应用物理研究所2011-2017年

	Band Offsets and Interfacial Properties of HfAlO Gate Dielectric Grown on InP by Atomic Layer Deposition
	Yang, LF; Wang, T; Zou, Y; Lu, HL
刊名	NANOSCALE RESEARCH LETTERS
	2017
卷号	12 页码:-
关键词	Band Alignments Hfalo Dielectric Inp Atomic Layer Deposition
ISSN号	1556-276X
DOI	10.1186/s11671-017-2104-y
文献子类	期刊论文
英文摘要	X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy have been used to determine interfacial properties of HfO2 and HfAlO gate dielectrics grown on InP by atomic layer deposition. An undesirable interfacial InPxOy layer is easily formed at the HfO2/InP interface, which can severely degrade the electrical performance. However, an abrupt interface can be achieved when the growth of the HfAlO dielectric on InP starts with an ultrathin Al2O3 layer. The valence and conduction band offsets for HfAlO/InP heterojunctions have been determined to be 1.87 +/- 0.1 and 2.83 +/- 0.1 eV, respectively. These advantages make HfAlO a potential dielectric for InP MOSFETs.
语种	英语
WOS记录号	WOS:000400960100002
内容类型	期刊论文
源URL	[http://ir.sinap.ac.cn/handle/331007/27265]
专题	上海应用物理研究所_中科院上海应用物理研究所2011-2017年
推荐引用方式 GB/T 7714	Yang, LF,Wang, T,Zou, Y,et al. Band Offsets and Interfacial Properties of HfAlO Gate Dielectric Grown on InP by Atomic Layer Deposition[J]. NANOSCALE RESEARCH LETTERS,2017,12:-.
APA	Yang, LF,Wang, T,Zou, Y,&Lu, HL.(2017).Band Offsets and Interfacial Properties of HfAlO Gate Dielectric Grown on InP by Atomic Layer Deposition.NANOSCALE RESEARCH LETTERS,12,-.
MLA	Yang, LF,et al."Band Offsets and Interfacial Properties of HfAlO Gate Dielectric Grown on InP by Atomic Layer Deposition".NANOSCALE RESEARCH LETTERS 12(2017):-.