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	On the Physical Modeling of Random Telegraph Noise (RTN) Amplitude in Nanoscale MOSFETs: From Ideal to Statistical Devices
	Zhang, Zexuan ; Guo, Shaofeng ; Zhang, Zhe ; Wang, Runsheng ; Huang, Ru
	2017
英文摘要	In this paper, an improved "hole in the inversion layer" (HIL) model for amplitude of random telegraph noise (RTN) is proposed with a deeper insight into the physical meaning of "hole" radius (key parameter of HIL model). The new physical definition of "hole" radius is well consistent with TCAD simulations for traps at different locations under various gate voltages. Then, the new model is further extended to consider statistical devices for experimental verification. The consistency between model prediction and experimental results show that RTN amplitudes can be accurately modeled based on the HIL framework and the effective width concept, which is helpful for future RTN-aware circuit design.; NSFC [61522402, 61421005]; CPCI-S(ISTP)
语种	英语
出处	International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/469837]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Zhang, Zexuan,Guo, Shaofeng,Zhang, Zhe,et al. On the Physical Modeling of Random Telegraph Noise (RTN) Amplitude in Nanoscale MOSFETs: From Ideal to Statistical Devices. 2017-01-01.

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