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浏览/检索结果: 共5条，第1-5条 帮助 限定条件 专题：上海微系统与信息技术研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Research on nitrogen implantation energy dependence of the properties of SIMON materials 期刊论文 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2006, 卷号: 242, 期号: 1-2, 页码: 585-587 Zhang, EX; Sun, JY; Chen, J; Chen, M; Zhang, ZX; Li, N; Zhang, GQ; Wang, X 收藏  |  浏览/下载：15/0  |  提交时间：2012/03/24 CHARGE  OXYGEN  OXIDES  LAYERS   Structural and electrical characteristics of oxygen-implanted 6H-SiC 期刊论文 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2000, 卷号: 169, 页码: 1-5 Wang, LW; Huang, JP; Duo, XZ; Song, ZT; Lin, CL; Zetterling, CM; Ostling, M 收藏  |  浏览/下载：16/0  |  提交时间：2012/03/24 ENHANCED THERMAL-OXIDATION  SILICON-CARBIDE  ION-IMPLANTATION  AMORPHIZATION  LAYERS   CONTROL OF DEFECTS IN C+, GE+, AND ER+ IMPLANTED SI USING POST AMORPHIZATION AND SOLID-PHASE REGROWTH 期刊论文 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1995, 卷号: 96, 期号: 1-2, 页码: 265-270 CRISTIANO, F; ZHANG, JP; WILSON, RJ; GILLIN, WP; HEMMENT, PLF 收藏  |  浏览/下载：7/0  |  提交时间：2012/03/25 REDUCTION  CARBON  SILICON  LAYERS   ELECTRICAL CHARACTERIZATION OF THIN-FILM SIMOX STRUCTURES 期刊论文 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 卷号: 74, 期号: 1-2, 页码: 218-221 ZHU, WH; LIN, CL; SHI, ZY; Zou, SC(邹世昌）; HEMMENT, PLF; NEJIM, A 收藏  |  浏览/下载：14/0  |  提交时间：2012/03/25 SILICON  LAYERS   ANALYSIS OF ELECTRICAL-PROPERTIES OF BURIED NITRIDE FORMED BY HIGH-DOSE N+ IMPLANTATION 期刊论文 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 卷号: 59, 页码: 690-692 ZHANG, SK; LIN, CL; ZHOU, ZY; Zou, SC(邹世昌） 收藏  |  浏览/下载：10/0  |  提交时间：2012/03/25 SILICON  LAYERS