ANALYSIS OF ELECTRICAL-PROPERTIES OF BURIED NITRIDE FORMED BY HIGH-DOSE N+ IMPLANTATION

CORC > 上海微系统与信息技术研究所 > 功能材料与器件 > 期刊论文（1999年以前)

	ANALYSIS OF ELECTRICAL-PROPERTIES OF BURIED NITRIDE FORMED BY HIGH-DOSE N+ IMPLANTATION
	ZHANG, SK ; LIN, CL ; ZHOU, ZY ; Zou, SC(邹世昌）
刊名	NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
	1991
卷号	59 页码:690-692
关键词	SILICON LAYERS
ISSN号	0168-583X
通讯作者	ZHANG, SK, ACAD SINICA,SHANGHAI INST MET,ION BEAM LAB,SHANGHAI 200050,PEOPLES R CHINA
学科主题	Instruments & Instrumentation; Nuclear Science & Technology; Physics, Atomic, Molecular & Chemical; Physics, Nuclear
收录类别	SCI
原文出处	http://apps.webofknowledge.com/full_record.do?product=UA&search_mode=GeneralSearch&qid=69&SID=Q2KJI8fO7EELblcPNIl&page=1&doc=1
语种	英语
公开日期	2012-03-25
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/98330]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文（1999年以前)
推荐引用方式 GB/T 7714	ZHANG, SK,LIN, CL,ZHOU, ZY,et al. ANALYSIS OF ELECTRICAL-PROPERTIES OF BURIED NITRIDE FORMED BY HIGH-DOSE N+ IMPLANTATION[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,1991,59:690-692.
APA	ZHANG, SK,LIN, CL,ZHOU, ZY,&Zou, SC.(1991).ANALYSIS OF ELECTRICAL-PROPERTIES OF BURIED NITRIDE FORMED BY HIGH-DOSE N+ IMPLANTATION.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,59,690-692.
MLA	ZHANG, SK,et al."ANALYSIS OF ELECTRICAL-PROPERTIES OF BURIED NITRIDE FORMED BY HIGH-DOSE N+ IMPLANTATION".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 59(1991):690-692.