CONTROL OF DEFECTS IN C+, GE+, AND ER+ IMPLANTED SI USING POST AMORPHIZATION AND SOLID-PHASE REGROWTH

CORC > 上海微系统与信息技术研究所 > 功能材料与器件 > 期刊论文（1999年以前)

	CONTROL OF DEFECTS IN C+, GE+, AND ER+ IMPLANTED SI USING POST AMORPHIZATION AND SOLID-PHASE REGROWTH
	CRISTIANO, F ; ZHANG, JP ; WILSON, RJ ; GILLIN, WP ; HEMMENT, PLF
刊名	NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
	1995
卷号	96 期号:1-2 页码:265-270
关键词	REDUCTION CARBON SILICON LAYERS
ISSN号	0168-583X
通讯作者	CRISTIANO, F, UNIV SURREY,DEPT ELECT & ELECTR ENGN,GUILDFORD GU2 5XH,SURREY,ENGLAND
学科主题	Instruments & Instrumentation; Nuclear Science & Technology; Physics, Atomic, Molecular & Chemical; Physics, Nuclear
收录类别	SCI
语种	英语
公开日期	2012-03-25
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/98639]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文（1999年以前)
推荐引用方式 GB/T 7714	CRISTIANO, F,ZHANG, JP,WILSON, RJ,et al. CONTROL OF DEFECTS IN C+, GE+, AND ER+ IMPLANTED SI USING POST AMORPHIZATION AND SOLID-PHASE REGROWTH[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,1995,96(1-2):265-270.
APA	CRISTIANO, F,ZHANG, JP,WILSON, RJ,GILLIN, WP,&HEMMENT, PLF.(1995).CONTROL OF DEFECTS IN C+, GE+, AND ER+ IMPLANTED SI USING POST AMORPHIZATION AND SOLID-PHASE REGROWTH.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,96(1-2),265-270.
MLA	CRISTIANO, F,et al."CONTROL OF DEFECTS IN C+, GE+, AND ER+ IMPLANTED SI USING POST AMORPHIZATION AND SOLID-PHASE REGROWTH".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 96.1-2(1995):265-270.