Research on nitrogen implantation energy dependence of the properties of SIMON materials
Zhang, EX ; Sun, JY ; Chen, J ; Chen, M ; Zhang, ZX ; Li, N ; Zhang, GQ ; Wang, X
刊名NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
2006
卷号242期号:1-2页码:585-587
关键词CHARGE OXYGEN OXIDES LAYERS
ISSN号0168-583X
通讯作者Zhang, EX, Chinese Acad Sci, Ion Beam Lab, Shanghai Inst Microsyst & Informat Technol, Shanghai 20050, Peoples R China
学科主题Instruments & Instrumentation; Nuclear Science & Technology; Physics, Atomic, Molecular & Chemical; Physics, Nuclear
收录类别SCI
语种英语
公开日期2012-03-24
内容类型期刊论文
源URL[http://ir.sim.ac.cn/handle/331004/95185]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式
GB/T 7714
Zhang, EX,Sun, JY,Chen, J,et al. Research on nitrogen implantation energy dependence of the properties of SIMON materials[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2006,242(1-2):585-587.
APA Zhang, EX.,Sun, JY.,Chen, J.,Chen, M.,Zhang, ZX.,...&Wang, X.(2006).Research on nitrogen implantation energy dependence of the properties of SIMON materials.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,242(1-2),585-587.
MLA Zhang, EX,et al."Research on nitrogen implantation energy dependence of the properties of SIMON materials".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 242.1-2(2006):585-587.
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