Structural and electrical characteristics of oxygen-implanted 6H-SiC

	Structural and electrical characteristics of oxygen-implanted 6H-SiC
	Wang, LW ; Huang, JP ; Duo, XZ ; Song, ZT ; Lin, CL ; Zetterling, CM ; Ostling, M
刊名	NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
	2000
卷号	169 页码:1-5
关键词	ENHANCED THERMAL-OXIDATION SILICON-CARBIDE ION-IMPLANTATION AMORPHIZATION LAYERS
ISSN号	0168-583X
通讯作者	Wang, LW, Chinese Acad Sci, Shanghai Inst Met, State Key Lab Funct Mat Informat, 865 Changing RD, Shanghai 200050, Peoples R China
学科主题	Instruments & Instrumentation; Nuclear Science & Technology; Physics, Atomic, Molecular & Chemical; Physics, Nuclear
收录类别	SCI
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/95772]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Wang, LW,Huang, JP,Duo, XZ,et al. Structural and electrical characteristics of oxygen-implanted 6H-SiC[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2000,169:1-5.
APA	Wang, LW.,Huang, JP.,Duo, XZ.,Song, ZT.,Lin, CL.,...&Ostling, M.(2000).Structural and electrical characteristics of oxygen-implanted 6H-SiC.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,169,1-5.
MLA	Wang, LW,et al."Structural and electrical characteristics of oxygen-implanted 6H-SiC".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 169(2000):1-5.