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科研机构
北京大学 [5]
内容类型
其他 [3]
期刊论文 [2]
发表日期
2013 [1]
2011 [1]
2008 [1]
2007 [1]
2006 [1]
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Simulation Study of Quasi-Ballistic Transport in Asymmetric DG-MOSFET by Directly Solving Boltzmann Transport Equation
其他
2013-01-01
Liu, Gai
;
Du, Gang
;
Lu, Tiao
;
Liu, Xiaoyan
;
Zhang, Pingwen
;
Zhang, Xing
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2015/11/10
Boltzmann transport equation (BTE)
double-gate FETs
numerical simulation
quasi-ballistic transport
BACKSCATTERING COEFFICIENT EXTRACTION
NANOSCALE MOSFETS
POISSON SYSTEM
MONTE-CARLO
WENO-SOLVER
TRANSISTORS
MOBILITY
DEVICES
MODEL
New Observations and Impacts of Diameter-Dependent Annealing Effects in Silicon Nanowire Transistors
其他
2011-01-01
Wang, Runsheng
;
Yu, Tao
;
Huang, Ru
;
Ding, Wei
;
Wang, Yangyuan
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2015/11/13
DENSITY-GRADIENT MODEL
DESIGN OPTIMIZATION
NANOSCALE MOSFETS
CARRIER TRANSPORT
ION-IMPLANTATION
CMOS TECHNOLOGY
DRIFT-DIFFUSION
SIMULATION
PERFORMANCE
An Analytic Model for Nanowire MOSFETs With Ge/Si Core/Shell Structure
期刊论文
ieee电子器件汇刊, 2008
Zhang, Lining
;
He, Jin
;
Zhang, Jian
;
Liu, Feng
;
Fu, Yue
;
Song, Yan
;
Zhang, Xing
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  |  
浏览/下载:5/0
  |  
提交时间:2015/11/10
Analytic model
ballistic transport
core/shell
Ge/Si heterojunction
nanowire MOSFETs (NWFETs)
Poisson-Boltzmann equation
quantum-mechanical effect
SURROUNDING-GATE MOSFETS
FIELD-EFFECT-TRANSISTOR
FERMI-DIRAC INTEGRALS
NANOSCALE MOSFETS
VOLUME INVERSION
SI MOSFETS
PERFORMANCE
HETEROSTRUCTURES
SIMULATION
TRANSPORT
Analog/RF performance of Si nanowire MOSFETs and the impact of process variation
期刊论文
ieee电子器件汇刊, 2007
Wang, Runsheng
;
Zhuge, Jing
;
Huang, Ru
;
Tian, Yu
;
Xiao, Han
;
Zhang, Liangliang
;
Li, Chen
;
Zhang, Xing
;
Wang, Yangyuan
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2015/11/10
analog
process variation
radio frequency (RF)
Si nanowire transistor (SNWT)
FIELD-EFFECT-TRANSISTOR
SILICON-NANOWIRE
NANOSCALE MOSFETS
DRIFT-DIFFUSION
SOI MOSFETS
GATE
SIMULATION
RF
DEVICE
SEMICONDUCTOR
PUNISM: An advanced surface potential based MOSFET model
其他
2006-01-01
He, J.
;
Song, Y.
;
Niu, X.
;
Li, B.
;
Zhang, X.
;
Huang, R.
;
Chan, M.
;
Wang, Y.
收藏
  |  
浏览/下载:1/0
  |  
提交时间:2015/11/16
MOSFETs
Nanoscale Technology
Device Physics
Compact Modelling
Surface potential Solution
Advanced MOSFET Model
PUNSIM
Parameter Extraction
Model Verification
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