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Analysis of electron transport in the nano-scaled Si, SOI and III-V MOSFETs: Si/SiO2 interface charges and quantum mechanical effects 期刊论文
IOP Conference Series: Materials Science and Engineering, 2019, 卷号: 504, 期号: 1
作者:  Islam, A.*;  Kalna, K.
收藏  |  浏览/下载：6/0  |  提交时间：2019/12/28
Novel GAA Si Nanowire p-MOSFETs With Excellent Short-Channel Effect Immunity via an Advanced Forming Process 期刊论文
IEEE Electron Device Letters, 2018
作者:  Zhang QZ(张青竹);  Yin HX(殷华湘);  Meng LK(孟令款);  Yao JX(姚佳欣);  Li JJ(李俊杰)
收藏  |  浏览/下载：27/0  |  提交时间：2019/05/05
Temperature Dependence of Dynamic Performance Characterization of 1.2 kV SiC Power MOSFETs compared with Si IGBTs for Wide Temperature Applications 期刊论文
IEEE Transactions on Power Electronics, 2018
作者:  Qi, Jinwei;  Yang, Xu;  Li, Xin;  Tian, Kai;  Mao, Zhangsong
收藏  |  浏览/下载：10/0  |  提交时间：2019/11/19
Characterization of 1.2 kV 4H-SiC power MOSFETs and Si IGBTs at cryogenic and high temperatures 会议论文
作者:  Tian, Kai;  Qi, Jinwei;  Mao, Zhangsong;  Yang, Song;  Song, Wenjie
收藏  |  浏览/下载：6/0  |  提交时间：2019/11/19
Dynamic Performance of 4H-SiC Power MOSFETs and Si IGBTs over Wide Temperature Range 会议论文
作者:  Qi, Jinwei;  Tian, Kai;  Mao, Zhangsong;  Yang, Song;  Song, Wenjie
收藏  |  浏览/下载：4/0  |  提交时间：2019/11/26
Experimental Investigation of Ballistic Carrier Transport for Sub-100-nm Ge n-MOSFETs 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2017
Cheng, Ran; Yin, Longxiang; Wu, Heng; Yu, Xiao; Zhang, Yanyan; Zheng, Zejie; Wu, Wangran; Chen, Bing; Ye, Peide D.; Liu, Xiaoyan; Zhao, Yi
收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03
Impact of quantum confinement on transport and the electrostatic driven performance of silicon nanowire transistors at the scaling limit 期刊论文
SOLID-STATE ELECTRONICS, 2017
Al-Ameri, Talib; Georgiev, Vihar P.; Sadi, Toufik; Wang, Yijiao; Adamu-Lema, Fikru; Wang, Xingsheng; Amoroso, Salvatore M.; Towie, Ewan; Brown, Andrew; Asenov, Asen
收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03
Fabrication and characterization of gate last Si MOSFETs with SiGe source and drain 学位论文
: KTH, 2017
作者:  Christensen,Björn
收藏  |  浏览/下载：4/0  |  提交时间：2019/12/24
Comprehensive comparison between silicon carbide MOSFETs and silicon IGBTs based traction systems for electric vehicles 期刊论文
APPLIED ENERGY, 2017, 卷号: 194, 页码: 626-634
作者:  Ding, Xiaofeng;  Du, Min;  Zhou, Tong;  Guo, Hong;  Zhang, Chengming
收藏  |  浏览/下载：2/0  |  提交时间：2019/12/30
Anomalous electrical properties induced by hot-electron-injection in 130-nm partially depleted soi nmosfets fabricated on modified wafer 期刊论文
Ieee transactions on nuclear science, 2016, 卷号: 63, 期号: 5, 页码: 2731-2737
作者:  Dai, Lihua;  Bi, Dawei;  Ning, Bingxu;  Hu, Zhiyuan;  Song, Lei
收藏  |  浏览/下载：59/0  |  提交时间：2019/05/09

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