An Analytic Model for Nanowire MOSFETs With Ge/Si Core/Shell Structure

doi:10.1109/TED.2008.2007417

CORC > 北京大学 > 信息科学技术学院

	An Analytic Model for Nanowire MOSFETs With Ge/Si Core/Shell Structure
	Zhang, Lining ; He, Jin ; Zhang, Jian ; Liu, Feng ; Fu, Yue ; Song, Yan ; Zhang, Xing
刊名	ieee电子器件汇刊
	2008
关键词	Analytic model ballistic transport core/shell Ge/Si heterojunction nanowire MOSFETs (NWFETs) Poisson-Boltzmann equation quantum-mechanical effect SURROUNDING-GATE MOSFETS FIELD-EFFECT-TRANSISTOR FERMI-DIRAC INTEGRALS NANOSCALE MOSFETS VOLUME INVERSION SI MOSFETS PERFORMANCE HETEROSTRUCTURES SIMULATION TRANSPORT
DOI	10.1109/TED.2008.2007417
英文摘要	An analytic model for the nanowire MOSFETs (NWFETs) with Ge/Si core/shell structure is developed in this paper. The analytical expressions of electrostatic potential and charges of this device are derived from classical device physics under the gradual channel approximation. Then, a drift-diffusion (DD) mechanism-based drain current model is obtained and verified by comparisons with the numerical simulation results. By modifying the intrinsic carrier concentration under 2-D confinement, quantum-mechanical effect is also taken into account approximately, and then, a ballistic current model is developed to study the impact of quantum-mechanical effect on the device characteristics. The performances of Ge/Si core/shell NWFETs are analyzed, and significant characteristics are demonstrated, in detail, by the proposed model. The presented analytic model may provide a base for device scientists and circuit engineers to understand the device physics and further develop a compact model of the NWFETs with Ge/Si core/shell heterostructure for circuit design and simulation.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000260899000009&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; Physics, Applied; SCI(E); EI; 9; ARTICLE; 11; 2907-2917; 55
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/152901]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Zhang, Lining,He, Jin,Zhang, Jian,et al. An Analytic Model for Nanowire MOSFETs With Ge/Si Core/Shell Structure[J]. ieee电子器件汇刊,2008.
APA	Zhang, Lining.,He, Jin.,Zhang, Jian.,Liu, Feng.,Fu, Yue.,...&Zhang, Xing.(2008).An Analytic Model for Nanowire MOSFETs With Ge/Si Core/Shell Structure.ieee电子器件汇刊.
MLA	Zhang, Lining,et al."An Analytic Model for Nanowire MOSFETs With Ge/Si Core/Shell Structure".ieee电子器件汇刊 (2008).