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| 半导体器件的制造方法 专利
专利号: US9899270, 申请日期: 2018-02-20, 公开日期: 2014-06-05
作者: 徐秋霞; 朱慧珑 ; 许高博; 周华杰; 梁擎擎
  收藏 | 浏览/下载：17/0 | 提交时间：2019/03/27 |
| 半导体器件的制造方法 专利
专利号: US9252059, 申请日期: 2016-02-02, 公开日期: 2014-06-05
作者: 徐秋霞; 陈大鹏; 许高博; 周华杰; 朱慧珑
收藏 | 浏览/下载：5/0 | 提交时间：2017/06/12 |
| Subthreshold Behavior Models for Nanoscale Short-Channel Junctionless Cylindrical Surrounding-Gate MOSFETs 期刊论文
ieee电子器件汇刊, 2013
Li, Cong; Zhuang, Yiqi; Di, Shaoyan; Han, Ru
收藏 | 浏览/下载：3/0 | 提交时间：2015/11/11
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| Analytic Yet Continuous Surface Potential versus Voltage Equation of Intrinsic Nanoscale Surrounding-Gate MOSFETs and Solution from Accumulation to Strong Inversion Region 期刊论文
journal of computational and theoretical nanoscience, 2013
Ye, Yun; He, Jin; Zhang, Aixing; He, Hongyue; Chen, Qin; Wang, Hao
收藏 | 浏览/下载：7/0 | 提交时间：2015/11/16
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| A unified charge-based model for SOI MOSFETs applicable from intrinsic to heavily doped channel 期刊论文
chinese physics b, 2012
Zhang Jian; He Jin; Zhou Xing-Ye; Zhang Li-Ning; Ma Yu-Tao; Chen Qin; Zhang Xu-Kai; Yang Zhang; Wang Rui-Fei; Han Yu; Chan Mansun
收藏 | 浏览/下载：3/0 | 提交时间：2015/11/13
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| An Analytical Threshold Voltage Model of Strained Surrounding-gate MOSFETs 会议论文
作者: Liu, Yao; Li, Zunchao
收藏 | 浏览/下载：3/0 | 提交时间：2019/12/10 |
| A quantum-confinement model for surrounding-gate MOSFETS from subthreshold to strong-inversion regions 期刊论文
SCIENCE CHINA-INFORMATION SCIENCES, 2012, 卷号: 55, 期号: [db:dc_citation_issue], 页码: 2399-2408
作者: Liu LinLin; Li ZunChao
收藏 | 浏览/下载：2/0 | 提交时间：2019/12/10
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| Predictive 3-D Modeling of Parasitic Gate Capacitance in Gate-all-Around Cylindrical Silicon Nanowire MOSFETs 期刊论文
ieee电子器件汇刊, 2011
Zou, Jibin; Xu, Qiumin; Luo, Jieying; Wang, Runsheng; Huang, Ru; Wang, Yangyuan
收藏 | 浏览/下载：3/0 | 提交时间：2015/11/10
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| A unified drain current model for nanoscale double-gate and surrounding-gate MOSFETs incorporating velocity saturation 期刊论文
journal of nanoscience and nanotechnology, 2011
Zhang Lining; Zhou Xingye; Xu Yiwen; Chen Lin; Zhou Wang; Wang Wenping; He Jin; Chan Mansun
收藏 | 浏览/下载：3/0 | 提交时间：2015/11/14 |
| Impact of random dopant fluctuation effect on surrounding gate MOSFETs: from atomic level simulation to circuit performance evaluation 期刊论文
journal of nanoscience and nanotechnology, 2011
Wang Hao; Ma Chenyue; Zhang Chenfei; Hel Jin; Liu Zhiwei; Lin Xinnan
收藏 | 浏览/下载：4/0 | 提交时间：2015/11/14 |
