Subthreshold Behavior Models for Nanoscale Short-Channel Junctionless   Cylindrical Surrounding-Gate MOSFETs

doi:10.1109/TED.2013.2281395

CORC > 北京大学 > 信息科学技术学院

	Subthreshold Behavior Models for Nanoscale Short-Channel Junctionless Cylindrical Surrounding-Gate MOSFETs
	Li, Cong ; Zhuang, Yiqi ; Di, Shaoyan ; Han, Ru
刊名	ieee电子器件汇刊
	2013
关键词	2-D analytical model cylindrical surrounding-gate (CSG) junctionless (JL) transistor short-channel effects subthreshold current FIELD-EFFECT TRANSISTORS THRESHOLD VOLTAGE CHARGE
DOI	10.1109/TED.2013.2281395
英文摘要	With the exact solution of the 2-D Poisson's equation in cylindrical coordinates, analytical subthreshold behavior models for junctionless cylindrical surrounding-gate (JLCSG) MOSFETs are developed. Using these analytical models, subthreshold characteristics of JLCSG MOSFETs are investigated in terms of channel electrostatic potential distribution, subthreshold current, and subthreshold slope (SS). It is shown that the electrostatic potential distribution, subthreshold current, and SS predicted by the analytical models are in close agreement with 3-D numerical simulation results without the need of any fitting parameters. These analytical models not only provide useful physical insight into the subthreshold behaviors, but also offer basic design guideline for the nanoscale JLCSG MOSFETs.; Engineering, Electrical & Electronic; Physics, Applied; SCI(E); EI; 0; ARTICLE; 11; 3655-3662; 60
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/219664]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Li, Cong,Zhuang, Yiqi,Di, Shaoyan,et al. Subthreshold Behavior Models for Nanoscale Short-Channel Junctionless Cylindrical Surrounding-Gate MOSFETs[J]. ieee电子器件汇刊,2013.
APA	Li, Cong,Zhuang, Yiqi,Di, Shaoyan,&Han, Ru.(2013).Subthreshold Behavior Models for Nanoscale Short-Channel Junctionless Cylindrical Surrounding-Gate MOSFETs.ieee电子器件汇刊.
MLA	Li, Cong,et al."Subthreshold Behavior Models for Nanoscale Short-Channel Junctionless Cylindrical Surrounding-Gate MOSFETs".ieee电子器件汇刊 (2013).