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浏览/检索结果: 共11条，第1-10条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Ion Sputter Induced Interfacial Reaction in Prototypical Metal-GaN System 期刊论文 SCIENTIFIC REPORTS, 2018 作者:  Li, Fangsen(李坊森);  An Dingsun;  Li, Zhanping;  Zhang, Shuming(张书明);  Zhang, Liqun(张立群) 收藏  |  浏览/下载：135/0  |  提交时间：2019/03/27 Study on the measurement accuracy of circular transmission line model for low-resistance Ohmic contacts on III-V wide band-gap semiconductors 期刊论文 CURRENT APPLIED PHYSICS, 2018 作者:  Zhang, Liqun(张立群);  An Dingsun(丁孙安);  Yang, Hui(杨辉);  Liu, Tong(刘通);  Huang, Rong(黄荣) 收藏  |  浏览/下载：135/0  |  提交时间：2019/03/27 Remote plasma-enhanced atomic layer deposition of metallic TiN films with low work function and high uniformity 期刊论文 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2018 作者:  Zhu, Yafeng;  Rong Huang(黄荣);  Tong Liu(刘通);  Zhao, Yanfei(赵弇斐);  Yang Shen(沈阳) 收藏  |  浏览/下载：134/0  |  提交时间：2019/03/27 Angular dependent XPS study of surface band bending on Ga-polar n-GaN 期刊论文 APPLIED SURFACE SCIENCE, 2018 作者:  An Dingsun(丁孙安);  Zhang, Shuming(张书明);  Zhang, Liqun(张立群);  Li, Fangsen(李坊森);  Liu, Jianping(刘建平) 收藏  |  浏览/下载：60/0  |  提交时间：2019/03/27 Remote plasma-enhanced atomic layer deposition of metallic TiN films with low work function and high uniformity 期刊论文 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2018, 卷号: 36 作者:  Zhu, Yafeng[1];  Li, Fangsen[2];  Rong Huang[3];  Tong Liu[4];  Zhao, Yanfei[5] 收藏  |  浏览/下载：19/0  |  提交时间：2019/04/22 p-GaN Gate Enhancement-Mode HEMT Through a High Tolerance Self-Terminated Etching Process 期刊论文 IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2017 作者:  Zhou, Yu（周宇）;  Zhong, Yaozong;  Gao, Hongwei（高宏伟）;  Dai, Shujun;  He, Junlei 收藏  |  浏览/下载：46/0  |  提交时间：2018/02/05 Self-terminated etching of GaN with a high selectivity over AlGaN under inductively coupled Cl-2/N-2/O-2 plasma with a low-energy ion bombardment 期刊论文 APPLIED SURFACE SCIENCE, 2017 作者:  Zhong, Yaozong;  Yu Zhou;  Gao, Hongwei（高宏伟）;  Dai, Shujun（戴淑君）;  He, Junlei（何俊蕾） 收藏  |  浏览/下载：55/0  |  提交时间：2018/02/06 Controllable process of nanostructured GaN by maskless inductively coupled plasma (ICP) etching 期刊论文 JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 2017 作者:  Zhao, Yanfei;  Hu Wang;  Wei Zhang;  Li, Jiadong;  Yang Shen 收藏  |  浏览/下载：23/0  |  提交时间：2018/02/05 Thermal Stability Study of GaP/High-k Dielectrics Interfaces 期刊论文 ADVANCED MATERIALS INTERFACES, 2017 作者:  Wang, Xinglu;  Zhao, Yanfei（赵弇斐）;  Huang, Rong（黄荣）;  Li, Fangsen（李坊森）;  Lu, Xiaoming（陆晓明） 收藏  |  浏览/下载：51/0  |  提交时间：2018/02/06 p-GaN Gate Enhancement-Mode HEMT Through a High Tolerance Self-Terminated Etching Process 期刊论文 IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2017, 卷号: 5, 页码: 340-346 作者:  Zhou, Yu[1];  Zhong, Yaozong[2];  Gao, Hongwei[3];  Dai, Shujun[4];  He, Junlei[5] 收藏  |  浏览/下载：13/0  |  提交时间：2019/04/24 Enhancement-mode  HEMT  p-GaN gate  self-terminated etching