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| Performance comparison between the InAs-based and GaSb-based type-II superlattice photodiodes for long wavelength infrared detection 期刊论文 OPTICS EXPRESS, 2017, 卷号: 25, 期号: 3, 页码: 1629-1635 作者: Wang FF; Chen JX; Xu ZC; Zhou Y; He L
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:20/0  |  提交时间:2018/11/20 |
| Electrical and optical performances of InGaAs/GaAsSb superlattice short-wavelength infrared detectors 期刊论文 OPTICAL ENGINEERING, 2017, 卷号: 56, 期号: 5 作者: Jin C; Chen JX; Xu QQ; Yu CZ; He L
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:35/0  |  提交时间:2018/11/20
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| Beryllium compensation doped InGaAs/GaAsSb superlattice photodiodes 会议论文 作者: Jin C; Wang FF; Xu QQ; Yu CZ; Chen JX
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:29/0  |  提交时间:2018/11/20 |
| High performance InAs/GaAsSb superlattice long wavelength infrared photo-detectors grown on InAs substrates 期刊论文 SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2017, 卷号: 32, 期号: 5 作者: Xu ZC; Chen JX; Wang FF; Zhou Y; He L
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:24/0  |  提交时间:2018/11/20
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| MBE growth and characterization of type-II InAs/GaSb superlattices LWIR materials and photodetectors with barrier structures 会议论文 作者: Xu ZC; Chen JX; Wang FF; Zhou Y; Bai ZZ
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:28/0  |  提交时间:2018/11/20 |
| How to Use Type II InAs/GaSb Superlattice Structure to Reach Detection Wavelength of 2-3 mu m 期刊论文 IEEE JOURNAL OF QUANTUM ELECTRONICS, 2012, 卷号: 48, 期号: 10 作者: Huang, JL; Ma, WQ; Wei, Y; Zhang, YH; Cui, K
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:11/0  |  提交时间:2013/03/18 |
| High quality of InAsSb epilayer with cutoff wavelength longer than 10 mu m grown on GaAs by the modified LPE technique 期刊论文 JOURNAL OF CRYSTAL GROWTH, 2009, 卷号: 311, 页码: 2309-2312 作者: Hu SH(胡淑红)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:10/0  |  提交时间:2011/07/14 |
| Cutoff wavelength of Hg1xCdxTe epilayers by infrared photoreflectance spectroscopy 期刊论文 Applied Physics Letters, 2007, 卷号: 90 作者: JunShao; XiangLü; WeiLu; FangyuYue; WeiHuangetal.
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:6/0  |  提交时间:2011/10/11 |
| Electrical Properties of Melt-Epitaxy-Grown InAs0:04Sb0:96 Layerswith Cutoff Wavelength of 12μm 期刊论文 Japanese Journal of Applied Physics Part 1-regular Papers Short Notes & Review Papers, 2004, 卷号: 43, 期号: 3 作者: Yu Zhu GAO; Xiu Ying GONG; Yong Sheng GUI; Tomuo YAMAGUCHI1 and Ning DAI
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:9/0  |  提交时间:2011/11/30 |
| InNAsSb Single Crystals with Cutoff Wavelength of 11–13.5μm Grown by Melt Epitaxy 期刊论文 Physics Part 1-Regular Papers Short Notes & Review Papers, 2003, 卷号: 42, 期号: 7A 作者: Yu Zhu GAO
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:15/0  |  提交时间:2011/11/30 |