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	Beryllium compensation doped InGaAs/GaAsSb superlattice photodiodes
	Jin C; Wang FF; Xu QQ; Yu CZ; Chen JX; He L
	2017
DOI	10.1016/j.jcrysgro.2017.01.050
英文摘要	In this paper the authors reported recent work on the growth and fabrication of InGaAs/GaAsSb type II superlattice detectors by solid source molecular beam epitaxy. Superlattice materials with different Beryllium (Be) doping concentration were grown and characterized by high resolution X-ray diffraction Hall Effect technique and photoluminescence. The results showed that doping concentration of the superlattice was sensitive to the Be temperature. A p-pi-n InGaAs/GaAsSb T2SL photodiode was grown on an InP substrate. The full width at half maximum of the first order satellite peak from X-ray diffraction was 36 arcsec. The photodiode with 7 nm InGaAs and 5 nm GaAsSb in each period showed a 50% cutoff wavelength of 2.35 mu m at 293 K. The dark current density at -50 mV bias was 0.54 mA/cm(2) and the resistance-area product at zero bias (R(0)A) was 46 Omega.cm(2). The peak detectivity was 4.4 X 10(10) cm Hz(1/2)/W. The quantum efficiency at 2.1 mu m was measured to be 48.2%. (C) 2017 Published by Elsevier B.V.
语种	英语
内容类型	会议论文
源URL	[http://202.127.2.71:8080/handle/181331/12082]
专题	上海技术物理研究所_上海技物所
作者单位	Shanghai Inst Tech Phys
推荐引用方式 GB/T 7714	Jin C,Wang FF,Xu QQ,et al. Beryllium compensation doped InGaAs/GaAsSb superlattice photodiodes[C]. 见:.

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