Electrical Properties of Melt-Epitaxy-Grown InAs0:04Sb0:96 Layerswith Cutoff Wavelength of 12μm

	Electrical Properties of Melt-Epitaxy-Grown InAs0:04Sb0:96 Layerswith Cutoff Wavelength of 12μm
	Yu Zhu GAO; Xiu Ying GONG; Yong Sheng GUI; Tomuo YAMAGUCHI1 and Ning DAI
刊名	Japanese Journal of Applied Physics Part 1-regular Papers Short Notes & Review Papers
	2004
卷号	43 期号:3
公开日期	2011-11-30
内容类型	期刊论文
源URL	[http://202.127.1.142/handle/181331/3379]
专题	上海技术物理研究所_上海技物所
推荐引用方式 GB/T 7714	Yu Zhu GAO,Xiu Ying GONG,Yong Sheng GUI,et al. Electrical Properties of Melt-Epitaxy-Grown InAs0:04Sb0:96 Layerswith Cutoff Wavelength of 12μm[J]. Japanese Journal of Applied Physics Part 1-regular Papers Short Notes & Review Papers,2004,43(3).
APA	Yu Zhu GAO,Xiu Ying GONG,Yong Sheng GUI,&Tomuo YAMAGUCHI1 and Ning DAI.(2004).Electrical Properties of Melt-Epitaxy-Grown InAs0:04Sb0:96 Layerswith Cutoff Wavelength of 12μm.Japanese Journal of Applied Physics Part 1-regular Papers Short Notes & Review Papers,43(3).
MLA	Yu Zhu GAO,et al."Electrical Properties of Melt-Epitaxy-Grown InAs0:04Sb0:96 Layerswith Cutoff Wavelength of 12μm".Japanese Journal of Applied Physics Part 1-regular Papers Short Notes & Review Papers 43.3(2004).