How to Use Type II InAs/GaSb Superlattice Structure to Reach Detection Wavelength of 2-3 mu m

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	How to Use Type II InAs/GaSb Superlattice Structure to Reach Detection Wavelength of 2-3 mu m
	Huang, JL; Ma, WQ; Wei, Y; Zhang, YH; Cui, K; Cao, YL; Guo, XL; Shao, J
刊名	IEEE JOURNAL OF QUANTUM ELECTRONICS
	2012
卷号	48 期号:10
英文摘要	The photoluminescence (PL) peak of an InAs/GaSb superlattice (SL) structure is found to be shifted from 5.8 to 4.0 mu m at 77 K, when the growth temperature is lowered from 380 to 340 degrees C. The PL peak shift is related to In intermixing, thus some SL structures cannot reach a detection wavelength < 3 mu m. Increasing the GaSb layer thickness in the SL structure is an effective way to reach a detection wavelength of 2-3 mu m. A p-i-n detector with a 50% cutoff wavelength at 2.56 mu m at 77 K is demonstrated.
WOS记录号	WOS:000307830800001
公开日期	2013-03-18
内容类型	期刊论文
源URL	[http://202.127.1.142/handle/181331/6975]
专题	上海技术物理研究所_上海技物所
推荐引用方式 GB/T 7714	Huang, JL,Ma, WQ,Wei, Y,et al. How to Use Type II InAs/GaSb Superlattice Structure to Reach Detection Wavelength of 2-3 mu m[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS,2012,48(10).
APA	Huang, JL.,Ma, WQ.,Wei, Y.,Zhang, YH.,Cui, K.,...&Shao, J.(2012).How to Use Type II InAs/GaSb Superlattice Structure to Reach Detection Wavelength of 2-3 mu m.IEEE JOURNAL OF QUANTUM ELECTRONICS,48(10).
MLA	Huang, JL,et al."How to Use Type II InAs/GaSb Superlattice Structure to Reach Detection Wavelength of 2-3 mu m".IEEE JOURNAL OF QUANTUM ELECTRONICS 48.10(2012).