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Enhance the electroluminescence efficiency of InGaN/GaN multiple quantum wells by optimizing the growth temperature of GaN barriers 期刊论文
Journal of Alloys and Compounds, 2019, 卷号: 806, 页码: 1077-1080
作者:  Xiaowei Wang ;   Feng Liang ;   Degang Zhao ;   Desheng Jiang ;   Zongshun Liu ;   Jianjun Zhu ;   Jing Yang
收藏  |  浏览/下载：9/0  |  提交时间：2020/08/04
Improvement of efficiency of gan-based polarization-doped light-emitting diodes grown by metalorganic chemical vapor deposition 期刊论文
Applied physics letters, 2011, 卷号: 98, 期号: 24, 页码: 3
作者:  Zhang, L.;  Wei, X. C.;  Liu, N. X.;  Lu, H. X.;  Zeng, J. P.
收藏  |  浏览/下载：14/0  |  提交时间：2019/05/12
Theoretical study of polarization-doped gan-based light-emitting diodes 期刊论文
Applied physics letters, 2011, 卷号: 98, 期号: 10, 页码: 3
作者:  Zhang, L.;  Ding, K.;  Liu, N. X.;  Wei, T. B.;  Ji, X. L.
收藏  |  浏览/下载：20/0  |  提交时间：2019/05/12
Multifunctional silicon-based light emitting device in standard complementary metal-oxide-semiconductor technology 期刊论文
Chinese physics b, 2011, 卷号: 20, 期号: 1, 页码: 7
作者:  Wang Wei;  Huang Bei-Ju;  Dong Zan;  Chen Hong-Da
收藏  |  浏览/下载：20/0  |  提交时间：2019/05/12
The investigation on carrier distribution in InGaN/GaN multiple quantum well layers 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 9, 页码: article no.93117
作者:  Yang H;  Zhu JH;  Wang H;  Zhang SM;  Yang H
收藏  |  浏览/下载：49/3  |  提交时间：2011/07/05
Multifunctional silicon-based light emitting device in standard complementary metal-oxide-semiconductor technology 期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 1, 页码: article no.18503
作者:  Dong Z;  Huang BJ
收藏  |  浏览/下载：50/2  |  提交时间：2011/07/05
Experimental observation of polarized electroluminescence from edge-emission organic light emitting devices 期刊论文
Applied physics letters, 2010, 卷号: 97, 期号: 23, 页码: 3
作者:  Ran, G. Z.;  Jiang, D. F.;  Kan, Q.;  Chen, H. D.
收藏  |  浏览/下载：17/0  |  提交时间：2019/05/12
Improvement of efficiency droop of gan-based light-emitting devices by a rear nitride reflector 期刊论文
Physica e-low-dimensional systems & nanostructures, 2010, 卷号: 43, 期号: 1, 页码: 289-292
作者:  Cai, Li-E;  Zhang, Bao-Ping;  Zhang, Jiang-Yong;  Wu, Chao-Min;  Jiang, Fang
收藏  |  浏览/下载：19/0  |  提交时间：2019/05/12
1.54 mu m electroluminescence from p-si anode organic light emitting diode with bphen: er(dbm)(3)phen as emitter and bphen as electron transport material 期刊论文
Optics express, 2010, 卷号: 18, 期号: 13, 页码: 13542-13546
作者:  Wei, F.;  Li, Y. Z.;  Ran, G. Z.;  Qin, G. G.
收藏  |  浏览/下载：13/0  |  提交时间：2019/05/12
Improvement of efficiency droop of GaN-based light-emitting devices by a rear nitride reflector 期刊论文
physica e-low-dimensional systems & nanostructures, 2010, 卷号: 43, 期号: 1, 页码: 289-292
Cai LE; Zhang BP; Zhang JY; Wu CM; Jiang F; Hu XL; Chen M; Wang QM
收藏  |  浏览/下载：43/1  |  提交时间：2011/07/05
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