Enhance the electroluminescence efficiency of InGaN/GaN multiple quantum wells by optimizing the growth temperature of GaN barriers

	Enhance the electroluminescence efficiency of InGaN/GaN multiple quantum wells by optimizing the growth temperature of GaN barriers
	Xiaowei Wang ; Feng Liang ; Degang Zhao ; Desheng Jiang ; Zongshun Liu ; Jianjun Zhu ; Jing Yang
刊名	Journal of Alloys and Compounds
	2019
卷号	806 页码:1077-1080
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/29687]
专题	半导体研究所_光电子研究发展中心
推荐引用方式 GB/T 7714	Xiaowei Wang ; Feng Liang ; Degang Zhao ; Desheng Jiang ; Zongshun Liu ; Jianjun Zhu ; Jing Yang. Enhance the electroluminescence efficiency of InGaN/GaN multiple quantum wells by optimizing the growth temperature of GaN barriers[J]. Journal of Alloys and Compounds,2019,806:1077-1080.
APA	Xiaowei Wang ; Feng Liang ; Degang Zhao ; Desheng Jiang ; Zongshun Liu ; Jianjun Zhu ; Jing Yang.(2019).Enhance the electroluminescence efficiency of InGaN/GaN multiple quantum wells by optimizing the growth temperature of GaN barriers.Journal of Alloys and Compounds,806,1077-1080.
MLA	Xiaowei Wang ; Feng Liang ; Degang Zhao ; Desheng Jiang ; Zongshun Liu ; Jianjun Zhu ; Jing Yang."Enhance the electroluminescence efficiency of InGaN/GaN multiple quantum wells by optimizing the growth temperature of GaN barriers".Journal of Alloys and Compounds 806(2019):1077-1080.