1.54 mu m electroluminescence from p-si anode organic light emitting diode with bphen: er(dbm)(3)phen as emitter and bphen as electron transport material | |
Wei, F.1; Li, Y. Z.1; Ran, G. Z.1; Qin, G. G.1,2 | |
刊名 | Optics express
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2010-06-21 | |
卷号 | 18期号:13页码:13542-13546 |
ISSN号 | 1094-4087 |
DOI | 10.1364/oe.18.013542 |
通讯作者 | Wei, f.() |
英文摘要 | 1.54 mu m si-anode organic light emitting devices with er(dbm)(3)phen: bphen and bphen/bphen:cs2co3 as the emissive and electron transport layers (the devices are referred to as the bphen-based devices) have been investigated. in comparison with the alq-based devices with the same structure but with alq:er(dbm)(3)phen and alq as the emissive and electron transport layers, the maximum el intensity and maximum power efficiency from the bphen-based devices increase by a factor of 3 and 2.2, respectively. the optimized p-si anode resistivity of the bphen-based device of 10 omega.cm is significantly lower than that of the alq-based device. the nir el improvement can be attributed to the energy transfer from bphen to the er complex and equilibrium of electron injection from the sm/au cathode and hole injection from the p-si anode at a higher level. (c) 2010 optical society of america |
WOS关键词 | SILICON ANODE ; COMPOUND ; COMPLEX |
WOS研究方向 | Optics |
WOS类目 | Optics |
语种 | 英语 |
出版者 | OPTICAL SOC AMER |
WOS记录号 | WOS:000279009900026 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2427817 |
专题 | 半导体研究所 |
通讯作者 | Wei, F. |
作者单位 | 1.Peking Univ, Sch Phys, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China 2.Chinese Acad Sci, Key Lab Semicond Mat, Beijing 100083, Peoples R China |
推荐引用方式 GB/T 7714 | Wei, F.,Li, Y. Z.,Ran, G. Z.,et al. 1.54 mu m electroluminescence from p-si anode organic light emitting diode with bphen: er(dbm)(3)phen as emitter and bphen as electron transport material[J]. Optics express,2010,18(13):13542-13546. |
APA | Wei, F.,Li, Y. Z.,Ran, G. Z.,&Qin, G. G..(2010).1.54 mu m electroluminescence from p-si anode organic light emitting diode with bphen: er(dbm)(3)phen as emitter and bphen as electron transport material.Optics express,18(13),13542-13546. |
MLA | Wei, F.,et al."1.54 mu m electroluminescence from p-si anode organic light emitting diode with bphen: er(dbm)(3)phen as emitter and bphen as electron transport material".Optics express 18.13(2010):13542-13546. |
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