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	Multifunctional silicon-based light emitting device in standard complementary metal-oxide-semiconductor technology
	Wang Wei; Huang Bei-Ju; Dong Zan; Chen Hong-Da
刊名	Chinese physics b
	2011
卷号	20期号:1页码:7
关键词	Optoelectronic integrated circuit Complementary metal-oxide-semiconductor technology Silicon-based light emitting device Electroluminescence
ISSN号	1674-1056
DOI	10.1088/1674-1056/20/1/018503
通讯作者	Wang wei(wangweiww33@semi.ac.cn)
英文摘要	A three-terminal silicon-based light emitting device is proposed and fabricated in standard 0.35 mu m complementary metal-oxide-semiconductor technology. this device is capable of versatile working modes: it can emit visible to near infra-red (nir) light (the spectrum ranges from 500 nm to 1000 nm) in reverse bias avalanche breakdown mode with working voltage between 8.35 v-12 v and emit nir light (the spectrum ranges from 900 nm to 1300 nm) in the forward injection mode with working voltage below 2 v. an apparent modulation effect on the light intensity from the polysilicon gate is observed in the forward injection mode. furthermore, when the gate oxide is broken down, nir light is emitted from the polysilicon/oxide/silicon structure. optoelectronic characteristics of the device working in different modes are measured and compared. the mechanisms behind these different emissions are explored.
WOS关键词	AVALANCHE BREAKDOWN ; PHOTON-EMISSION ; CURRENT-DENSITY ; DIODES ; MODEL ; ELECTROLUMINESCENCE ; SUPERLATTICES ; EFFICIENCY ; JUNCTIONS ; LEDS
WOS研究方向	Physics
WOS类目	Physics, Multidisciplinary
语种	英语
出版者	IOP PUBLISHING LTD
WOS记录号	WOS:000286676000103
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2428434
专题	半导体研究所
通讯作者	Wang Wei
作者单位	Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Wang Wei,Huang Bei-Ju,Dong Zan,et al. Multifunctional silicon-based light emitting device in standard complementary metal-oxide-semiconductor technology[J]. Chinese physics b,2011,20(1):7.
APA	Wang Wei,Huang Bei-Ju,Dong Zan,&Chen Hong-Da.(2011).Multifunctional silicon-based light emitting device in standard complementary metal-oxide-semiconductor technology.Chinese physics b,20(1),7.
MLA	Wang Wei,et al."Multifunctional silicon-based light emitting device in standard complementary metal-oxide-semiconductor technology".Chinese physics b 20.1(2011):7.

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