Improvement of efficiency of gan-based polarization-doped light-emitting diodes grown by metalorganic chemical vapor deposition | |
Zhang, L.; Wei, X. C.; Liu, N. X.; Lu, H. X.; Zeng, J. P.; Wang, J. X.; Zeng, Y. P.; Li, J. M. | |
刊名 | Applied physics letters
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2011-06-13 | |
卷号 | 98期号:24页码:3 |
ISSN号 | 0003-6951 |
DOI | 10.1063/1.3601469 |
通讯作者 | Zhang, l.(zhanglian07@semi.ac.cn) |
英文摘要 | Our simulated results [appl. phys. lett. 98, 101110 (2011)] reveal that polarization-doped light-emitting diodes (leds) have improved internal quantum efficiency due to the enhanced hole injection caused by the improved hole concentration and smooth valence band. in this letter, in order to verify these calculated results, polarization-doped leds grown by metalorganic chemical vapor deposition are investigated. the results show that the polarization-doped led has the improved electroluminescence intensity and external quantum efficiency (eqe) compared with the conventional led. the influence of the degree of algan gradation on polarization-doped leds is also studied. it is found that the polarization-doped led has the highest eqe when the al composition of the graded algan is linearly decreased from 0.2 to 0. (c) 2011 american institute of physics. [doi:10.1063/1.3601469] |
WOS关键词 | ALGAN/GAN HETEROSTRUCTURES ; TRANSPORT-PROPERTIES |
WOS研究方向 | Physics |
WOS类目 | Physics, Applied |
语种 | 英语 |
出版者 | AMER INST PHYSICS |
WOS记录号 | WOS:000291803600011 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2428465 |
专题 | 半导体研究所 |
通讯作者 | Zhang, L. |
作者单位 | Chinese Acad Sci, Inst Semicond, Res & Dev Ctr Semicond Lighting, Beijing 100083, Peoples R China |
推荐引用方式 GB/T 7714 | Zhang, L.,Wei, X. C.,Liu, N. X.,et al. Improvement of efficiency of gan-based polarization-doped light-emitting diodes grown by metalorganic chemical vapor deposition[J]. Applied physics letters,2011,98(24):3. |
APA | Zhang, L..,Wei, X. C..,Liu, N. X..,Lu, H. X..,Zeng, J. P..,...&Li, J. M..(2011).Improvement of efficiency of gan-based polarization-doped light-emitting diodes grown by metalorganic chemical vapor deposition.Applied physics letters,98(24),3. |
MLA | Zhang, L.,et al."Improvement of efficiency of gan-based polarization-doped light-emitting diodes grown by metalorganic chemical vapor deposition".Applied physics letters 98.24(2011):3. |
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