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	Improvement of efficiency of gan-based polarization-doped light-emitting diodes grown by metalorganic chemical vapor deposition
	Zhang, L.; Wei, X. C.; Liu, N. X.; Lu, H. X.; Zeng, J. P.; Wang, J. X.; Zeng, Y. P.; Li, J. M.
刊名	Applied physics letters
	2011-06-13
卷号	98期号:24页码:3
ISSN号	0003-6951
DOI	10.1063/1.3601469
通讯作者	Zhang, l.(zhanglian07@semi.ac.cn)
英文摘要	Our simulated results [appl. phys. lett. 98, 101110 (2011)] reveal that polarization-doped light-emitting diodes (leds) have improved internal quantum efficiency due to the enhanced hole injection caused by the improved hole concentration and smooth valence band. in this letter, in order to verify these calculated results, polarization-doped leds grown by metalorganic chemical vapor deposition are investigated. the results show that the polarization-doped led has the improved electroluminescence intensity and external quantum efficiency (eqe) compared with the conventional led. the influence of the degree of algan gradation on polarization-doped leds is also studied. it is found that the polarization-doped led has the highest eqe when the al composition of the graded algan is linearly decreased from 0.2 to 0. (c) 2011 american institute of physics. [doi:10.1063/1.3601469]
WOS关键词	ALGAN/GAN HETEROSTRUCTURES ; TRANSPORT-PROPERTIES
WOS研究方向	Physics
WOS类目	Physics, Applied
语种	英语
出版者	AMER INST PHYSICS
WOS记录号	WOS:000291803600011
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2428465
专题	半导体研究所
通讯作者	Zhang, L.
作者单位	Chinese Acad Sci, Inst Semicond, Res & Dev Ctr Semicond Lighting, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Zhang, L.,Wei, X. C.,Liu, N. X.,et al. Improvement of efficiency of gan-based polarization-doped light-emitting diodes grown by metalorganic chemical vapor deposition[J]. Applied physics letters,2011,98(24):3.
APA	Zhang, L..,Wei, X. C..,Liu, N. X..,Lu, H. X..,Zeng, J. P..,...&Li, J. M..(2011).Improvement of efficiency of gan-based polarization-doped light-emitting diodes grown by metalorganic chemical vapor deposition.Applied physics letters,98(24),3.
MLA	Zhang, L.,et al."Improvement of efficiency of gan-based polarization-doped light-emitting diodes grown by metalorganic chemical vapor deposition".Applied physics letters 98.24(2011):3.

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