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浏览/检索结果: 共10条，第1-10条 帮助 限定条件 专题：长春光学精密机械与物理研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Structure optimization of high indium content InGaAs/InP heterostructure for the growth of In0.82Ga0.18As buffer layer 期刊论文 Optoelectronics Letters, 2016, 卷号: 12, 期号: 6 作者:  Wei, Q.-l.;  Z.-x. Guo;  L. Zhao;  L. Zhao;  D.-z. Yuan 收藏  |  浏览/下载：13/0  |  提交时间：2017/09/11 Spectral calibration of medical microscopic imaging spectrometer 期刊论文 Guangxue Jingmi Gongcheng/Optics and Precision Engineering, 2016, 卷号: 24, 期号: 5 作者:  Wei, W.;  J.-C. Cui;  Y.-G. Tang;  C. Sun and M.-Z. Pan 收藏  |  浏览/下载：14/0  |  提交时间：2017/09/11 Efficient Perovskite Solar Cells Based on Multilayer Transparent Electrodes through Morphology Control 期刊论文 Journal of Physical Chemistry C, 2016, 卷号: 120, 期号: 47 作者:  Liu, X.;  X. Y. Guo;  Z. H. Gan;  N. Zhang and X. Y. Liu 收藏  |  浏览/下载：21/0  |  提交时间：2017/09/11 延伸波长In0.82Ga0.18As 红外探测器器件结构优化设计 学位论文 硕士: 中国科学院大学, 2014 赵旭 收藏  |  浏览/下载：95/0  |  提交时间：2015/05/03 “铟镓砷”  “暗电流”  “APSYS”   Response spectrum 0.9-2.65 m of In0.82Ga0.18As detectors by two-step growth technique 会议论文 2012 International Conference on Material Sciences and Manufacturing Technology, ICMSMT 2012, October 5, 2012 - October 6, 2012, Dalian, China Zhang T.; Miao G.; Fu J.; Ban D.; Shen Z.; Lin H.; Zou X.; Peng H. 收藏  |  浏览/下载：37/0  |  提交时间：2014/05/15 Response spectrum 0.9-2.65 m of In0.82Ga0.18As detectors by two-step growth technique (EI CONFERENCE) 会议论文 2012 International Conference on Material Sciences and Manufacturing Technology, ICMSMT 2012, October 5, 2012 - October 6, 2012, Dalian, China Zhang T.; Miao G.; Fu J.; Ban D.; Shen Z.; Lin H.; Zou X.; Peng H. 收藏  |  浏览/下载：20/0  |  提交时间：2013/03/25 InP/In0.82Ga0.18As/InP heterostructure used for infrared detector were grown on (100) S-doped InP substrates using two-step growth technique by low temperature metal-organic chemical vapor deposition. The growth was performed using TMIn  TMGa  AsH3  and PH3 as growth precursors in a horizontal reactor. The substrates on a graphite susceptor were heated by inductively coupling RF power  their temperatures were detected by a thermocouple  and the reactor pressure was kept at 10000 Pa. The growth structure of detector included In0.82Ga0.18As buffer with the thickness of 100 nm  In0.82Ga0.18As absorption layer with the thickness of 2.8 m  and the InP cap with the thickness of 0.8 m. The planar type of p-i-n detector was fabricated by Zn diffusion. The properties of In0.82Ga0.18As detector were studied  the curves of the I-V characteristics  the range of response spectrum  and the detectivity (D*) were obtained. (2013) Trans Tech Publications  Switzerland.   Influence of buffer layer thickness and epilayer's growth temperature on crystalline quality of InAs0.6P0.4InP grown by LP-MOCVD 期刊论文 Solid State Communications, 2011, 卷号: 151, 期号: 12, 页码: 904-907 Liu X.; Song H.; Miao G.; Jiang H.; Cao L.; Sun X.; Li D.; Chen Y.; Li Z. 收藏  |  浏览/下载：19/0  |  提交时间：2012/10/21 Influence of buffer layer thickness and epilayer's growth temperature on crystalline quality of InAs0.6P0.4/Inp grown by LP-MOCVD 期刊论文 Solid State Communications, 2011, 卷号: 151, 期号: 12, 页码: 904-907 Liu X.; Song H.; Miao G. Q.; Jiang H.; Cao L. Z.; Sun X. J.; Li D. B.; Chen Y. R.; Li Z. M. 收藏  |  浏览/下载：12/0  |  提交时间：2012/10/21 Influence of thermal annealing duration of buffer layer on the crystalline quality of In0.82Ga0.18As grown on InP substrate by LP-MOCVD 期刊论文 Applied Surface Science, 2011, 卷号: 257, 期号: 6, 页码: 1996-1999 Liu X.; Song H.; Miao G. Q.; Jiang H.; Cao L. Z.; Li D. B.; Sun X. J.; Chen Y. R. 收藏  |  浏览/下载：13/0  |  提交时间：2012/10/21 Effect of In content of the buffer layer on crystalline quality and electrical property of In0.82Ga0.18As/InP grown by LP-MOCVD 期刊论文 Microelectronics Journal, 2007, 卷号: 38, 期号: 3, 页码: 398-400 Zhang T. M.; Miao G. Q.; Jin Y. X.; Xie J. C.; Jiang H.; Li Z. M.; Song H. 收藏  |  浏览/下载：11/0  |  提交时间：2012/10/21