Influence of buffer layer thickness and epilayer's growth temperature on crystalline quality of InAs0.6P0.4/Inp grown by LP-MOCVD

	Influence of buffer layer thickness and epilayer's growth temperature on crystalline quality of InAs0.6P0.4/Inp grown by LP-MOCVD
	Liu X. ; Song H. ; Miao G. Q. ; Jiang H. ; Cao L. Z. ; Sun X. J. ; Li D. B. ; Chen Y. R. ; Li Z. M.
刊名	Solid State Communications
	2011
卷号	151 期号:12 页码:904-907
ISSN号	0038-1098
其他题名	论文其他题名
合作状况	合作性质
收录类别	SCI
语种	英语
公开日期	2012-10-21
内容类型	期刊论文
源URL	[http://ir.ciomp.ac.cn/handle/181722/24730]
专题	长春光学精密机械与物理研究所_中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Liu X.,Song H.,Miao G. Q.,et al. Influence of buffer layer thickness and epilayer's growth temperature on crystalline quality of InAs0.6P0.4/Inp grown by LP-MOCVD[J]. Solid State Communications,2011,151(12):904-907.
APA	Liu X..,Song H..,Miao G. Q..,Jiang H..,Cao L. Z..,...&Li Z. M..(2011).Influence of buffer layer thickness and epilayer's growth temperature on crystalline quality of InAs0.6P0.4/Inp grown by LP-MOCVD.Solid State Communications,151(12),904-907.
MLA	Liu X.,et al."Influence of buffer layer thickness and epilayer's growth temperature on crystalline quality of InAs0.6P0.4/Inp grown by LP-MOCVD".Solid State Communications 151.12(2011):904-907.