Influence of thermal annealing duration of buffer layer on the crystalline quality of In0.82Ga0.18As grown on InP substrate by LP-MOCVD

	Influence of thermal annealing duration of buffer layer on the crystalline quality of In0.82Ga0.18As grown on InP substrate by LP-MOCVD
	Liu X. ; Song H. ; Miao G. Q. ; Jiang H. ; Cao L. Z. ; Li D. B. ; Sun X. J. ; Chen Y. R.
刊名	Applied Surface Science
	2011
卷号	257 期号:6 页码:1996-1999
ISSN号	0169-4332
其他题名	论文其他题名
合作状况	合作性质
收录类别	SCI ; EI
语种	英语
公开日期	2012-10-21
内容类型	期刊论文
源URL	[http://ir.ciomp.ac.cn/handle/181722/26073]
专题	长春光学精密机械与物理研究所_中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Liu X.,Song H.,Miao G. Q.,et al. Influence of thermal annealing duration of buffer layer on the crystalline quality of In0.82Ga0.18As grown on InP substrate by LP-MOCVD[J]. Applied Surface Science,2011,257(6):1996-1999.
APA	Liu X..,Song H..,Miao G. Q..,Jiang H..,Cao L. Z..,...&Chen Y. R..(2011).Influence of thermal annealing duration of buffer layer on the crystalline quality of In0.82Ga0.18As grown on InP substrate by LP-MOCVD.Applied Surface Science,257(6),1996-1999.
MLA	Liu X.,et al."Influence of thermal annealing duration of buffer layer on the crystalline quality of In0.82Ga0.18As grown on InP substrate by LP-MOCVD".Applied Surface Science 257.6(2011):1996-1999.