Effect of In content of the buffer layer on crystalline quality and electrical property of In0.82Ga0.18As/InP grown by LP-MOCVD

	Effect of In content of the buffer layer on crystalline quality and electrical property of In0.82Ga0.18As/InP grown by LP-MOCVD
	Zhang T. M. ; Miao G. Q. ; Jin Y. X. ; Xie J. C. ; Jiang H. ; Li Z. M. ; Song H.
刊名	Microelectronics Journal
	2007
卷号	38 期号:3 页码:398-400
ISSN号	0026-2692
其他题名	论文其他题名
合作状况	合作性质
收录类别	SCI ; EI
语种	英语
公开日期	2012-10-21
内容类型	期刊论文
源URL	[http://ir.ciomp.ac.cn/handle/181722/26568]
专题	长春光学精密机械与物理研究所_中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Zhang T. M.,Miao G. Q.,Jin Y. X.,et al. Effect of In content of the buffer layer on crystalline quality and electrical property of In0.82Ga0.18As/InP grown by LP-MOCVD[J]. Microelectronics Journal,2007,38(3):398-400.
APA	Zhang T. M..,Miao G. Q..,Jin Y. X..,Xie J. C..,Jiang H..,...&Song H..(2007).Effect of In content of the buffer layer on crystalline quality and electrical property of In0.82Ga0.18As/InP grown by LP-MOCVD.Microelectronics Journal,38(3),398-400.
MLA	Zhang T. M.,et al."Effect of In content of the buffer layer on crystalline quality and electrical property of In0.82Ga0.18As/InP grown by LP-MOCVD".Microelectronics Journal 38.3(2007):398-400.