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	Response spectrum 0.9-2.65 m of In0.82Ga0.18As detectors by two-step growth technique (EI CONFERENCE)
	Zhang T. ; Miao G. ; Fu J. ; Ban D. ; Shen Z. ; Lin H. ; Zou X. ; Peng H.
	2013
会议名称	2012 International Conference on Material Sciences and Manufacturing Technology, ICMSMT 2012, October 5, 2012 - October 6, 2012
会议地点	Dalian, China
关键词	InP/In0.82Ga0.18As/InP heterostructure used for infrared detector were grown on (100) S-doped InP substrates using two-step growth technique by low temperature metal-organic chemical vapor deposition. The growth was performed using TMIn TMGa AsH3 and PH3 as growth precursors in a horizontal reactor. The substrates on a graphite susceptor were heated by inductively coupling RF power their temperatures were detected by a thermocouple and the reactor pressure was kept at 10000 Pa. The growth structure of detector included In0.82Ga0.18As buffer with the thickness of 100 nm In0.82Ga0.18As absorption layer with the thickness of 2.8 m and the InP cap with the thickness of 0.8 m. The planar type of p-i-n detector was fabricated by Zn diffusion. The properties of In0.82Ga0.18As detector were studied the curves of the I-V characteristics the range of response spectrum and the detectivity (D*) were obtained. (2013) Trans Tech Publications Switzerland.
页码	209-213
收录类别	EI
内容类型	会议论文
源URL	[http://ir.ciomp.ac.cn/handle/181722/33129]
专题	长春光学精密机械与物理研究所_中科院长春光机所知识产出_会议论文
推荐引用方式 GB/T 7714	Zhang T.,Miao G.,Fu J.,et al. Response spectrum 0.9-2.65 m of In0.82Ga0.18As detectors by two-step growth technique (EI CONFERENCE)[C]. 见:2012 International Conference on Material Sciences and Manufacturing Technology, ICMSMT 2012, October 5, 2012 - October 6, 2012. Dalian, China.

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