CORC

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CORC

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The two- to three-dimensional growth transition of InAs/GaAs epitaxy layer studied by reflectance difference spectroscopy 期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 8, 页码: art. no. 083513
Zhou GY (Zhou G. Y.); Chen YH (Chen Y. H.); Tang CG (Tang C. G.); Liang LY (Liang L. Y.); Jin P (Jin P.); Wang ZG (Wang Z. G.)
收藏  |  浏览/下载：13/0  |  提交时间：2010/12/05
Hydrogen sensors based on Pt-AlGaN/GaN back-to-back Schottky diode 会议论文
34th international symposium on compound semiconductors, kyoto, japan, oct 15-18, 2007
Wang, XH; Wang, XL; Xiao, HL; Feng, C; Wang, XY; Wang, BZ; Yang, CB; Wang, JX; Wang, CM; Ran, JX; Hu, GX; Li, JM
收藏  |  浏览/下载：43/0  |  提交时间：2010/03/09
Uniformity Investigation in 3C-SiC Epitaxial Layers Grown on Si Substrates by Horizontal Hot-Wall CVD 期刊论文
半导体学报, 2007, 卷号: 28, 期号: 1, 页码: 1-4
作者:  Liu Xingfang;  Zhao Yongmei
收藏  |  浏览/下载：15/0  |  提交时间：2010/11/23
The effect of Be-doping structure in negative electron affinity GaAs photocathodes on integrated photosensitivity 期刊论文
applied surface science, 2006, 卷号: 252, 期号: 12, 页码: 4104-4109
Wang XF; Zeng YP; Wang BQ; Zhu ZP; Du XQ; Li M; Chang BK
收藏  |  浏览/下载：43/0  |  提交时间：2010/04/11
Electrical properties of B-doped polycrystalline silicon thin films prepared by rapid thermal chemical vapour deposition 期刊论文
thin solid films, 2006, 卷号: 497, 期号: 1-2, 页码: 157-162
Ai B; Shen H; Liang ZC; Chen Z; Kong GL; Liao XB
收藏  |  浏览/下载：48/0  |  提交时间：2010/04/11
Growth and properties of GaN on Si (111) substrates with AlGaN/AlN buffer layer by NH3-GSMBE 期刊论文
journal of physics d-applied physics, 2005, 卷号: 38, 期号: 12, 页码: 1888-1891
Zhang NH; Wang XL; Zeng YP; Xiao HL; Wang JX; Liu HX; Li JM
收藏  |  浏览/下载：64/25  |  提交时间：2010/03/17
Effect of Silicon-on-Insulator Substrate on Residual Strain in 3C-SiC Films 期刊论文
半导体学报, 2005, 卷号: 26, 期号: 9, 页码: 1681-1687
Wang Xiaofeng; Huang Fengyi; Sun Guosheng; Wang Lei; Zhao Wanshun; Zeng Yiping; Li Haiou; Duan Xiaofeng
收藏  |  浏览/下载：26/0  |  提交时间：2010/11/23
Influence of high-temperature AIN buffer thickness on the properties of GaN grown on Si(111) 期刊论文
journal of crystal growth, 2003, 卷号: 258, 期号: 1-2, 页码: 34-40
作者:  Zhao DG
收藏  |  浏览/下载：299/12  |  提交时间：2010/08/12
Size and shape evolution of self-assembled coherent InAs/GaAs quantum dots influenced by seed layer 会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
作者:  Xu B
收藏  |  浏览/下载：11/0  |  提交时间：2010/11/15
Size and shape evolution of self-assembled coherent InAs/GaAs quantum dots influenced by seed layer 期刊论文
journal of crystal growth, 2001, 卷号: 227, 期号: 0, 页码: 1005-1009
作者:  Xu B
收藏  |  浏览/下载：125/19  |  提交时间：2010/08/12

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