Size and shape evolution of self-assembled coherent InAs/GaAs quantum dots influenced by seed layer

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	Size and shape evolution of self-assembled coherent InAs/GaAs quantum dots influenced by seed layer
	Xu B
	2001
会议名称	11th international conference on molecular beam epitaxy (mbe-xi)
会议日期	sep 11-15, 2000
会议地点	beijing, peoples r china
关键词	low dimensional structures molecular beam epitaxy nanomaterials INAS ISLANDS GAAS GROWTH GAAS(100) THICKNESS DENSITY
页码	1005-1009
通讯作者	liu hy chinese acad sci inst semicond lab semicond mat sci pob 912 beijing 100083 peoples r china.
中文摘要	the size and shape evolution of self-assembled inas quantum dots (qds) influenced by 2.0-ml inas seed layer has been systematically investigated for 2.0, 2.5, and 2.9-ml deposition on gaas(1 0 0) substrate. based on comparisons with the evolution of inas islands on single layer samples at late growth stage, the bimodal size distribution of inas islands at 2.5-ml inas coverage and the formation of larger inas quantum dots at 2.9-ml deposition have been observed on the second inas layer. the further cross-sectional transmission electron microscopy measurement indicates the larger inas qds: at 2.9-ml deposition on the second layer are free of dislocation. in addition, the interpretations for the size and shape evolution of inas/gaas qds on the second layer will be presented. (c) 2001 elsevier science b.v. all lights reserved.
英文摘要	the size and shape evolution of self-assembled inas quantum dots (qds) influenced by 2.0-ml inas seed layer has been systematically investigated for 2.0, 2.5, and 2.9-ml deposition on gaas(1 0 0) substrate. based on comparisons with the evolution of inas islands on single layer samples at late growth stage, the bimodal size distribution of inas islands at 2.5-ml inas coverage and the formation of larger inas quantum dots at 2.9-ml deposition have been observed on the second inas layer. the further cross-sectional transmission electron microscopy measurement indicates the larger inas qds: at 2.9-ml deposition on the second layer are free of dislocation. in addition, the interpretations for the size and shape evolution of inas/gaas qds on the second layer will be presented. (c) 2001 elsevier science b.v. all lights reserved.; 于2010-11-15批量导入; zhangdi于2010-11-15 17:02:20导入数据到semi-ir的ir; made available in dspace on 2010-11-15t09:02:20z (gmt). no. of bitstreams: 1 2922.pdf: 228094 bytes, checksum: de87fa331de84e62acbbbc8f027837e6 (md5) previous issue date: 2001; china natl nat sci fdn.; inst semiconductor, cas.; inst phys, cas.; state key lab funct mat informat.; inst met, cas.; hong kong univ sci & technol.; univ hong kong, lab new mat.; chinese acad sci, lab new mat.; vg semicon.; riber.; chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china
收录类别	CPCI-S
会议主办者	china natl nat sci fdn.; inst semiconductor, cas.; inst phys, cas.; state key lab funct mat informat.; inst met, cas.; hong kong univ sci & technol.; univ hong kong, lab new mat.; chinese acad sci, lab new mat.; vg semicon.; riber.
会议录	journal of crystal growth, 227
会议录出版者	elsevier science bv ; po box 211, 1000 ae amsterdam, netherlands
会议录出版地	po box 211, 1000 ae amsterdam, netherlands
学科主题	半导体材料
语种	英语
ISSN号	0022-0248
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/14953]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Xu B. Size and shape evolution of self-assembled coherent InAs/GaAs quantum dots influenced by seed layer[C]. 见:11th international conference on molecular beam epitaxy (mbe-xi). beijing, peoples r china. sep 11-15, 2000.