The effect of Be-doping structure in negative electron affinity GaAs photocathodes on integrated photosensitivity

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	The effect of Be-doping structure in negative electron affinity GaAs photocathodes on integrated photosensitivity
	Wang XF ; Zeng YP ; Wang BQ ; Zhu ZP ; Du XQ ; Li M ; Chang BK
刊名	applied surface science
	2006
卷号	252 期号:12 页码:4104-4109
关键词	structure NEA integrated photosensitivity GaAs Cs : O SPECTRAL RESPONSE NEA PHOTOCATHODES LAYER THICKNESS CS SURFACE PHOTOEMISSION SYSTEM
ISSN号	0169-4332
通讯作者	wang, xf, chinese acad sci, inst semicond, pob 912, beijing 100083, peoples r china. e-mail: xiaofw@red.semi.ac.cn
中文摘要	a new structure of gaas photocathode was introduced. the be-doping concentration is variable in the new structure compared with the constant concentration of be in the normal photocathode. negative electron affinity gaas photocathodes were fabricated by alternate input of cs and o. the spectral response results measured by the on-line spectral response measurement system show that the integrated photosensitivity of the photocathodes with the new structure is enhanced by at least 50% as compared to those with the monolayer structure. accordingly, two main factors leading to the enhanced photosensitivity of the photocathodes were discussed. (c) 2005 elsevier b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-04-11
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/10654]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wang XF,Zeng YP,Wang BQ,et al. The effect of Be-doping structure in negative electron affinity GaAs photocathodes on integrated photosensitivity[J]. applied surface science,2006,252(12):4104-4109.
APA	Wang XF.,Zeng YP.,Wang BQ.,Zhu ZP.,Du XQ.,...&Chang BK.(2006).The effect of Be-doping structure in negative electron affinity GaAs photocathodes on integrated photosensitivity.applied surface science,252(12),4104-4109.
MLA	Wang XF,et al."The effect of Be-doping structure in negative electron affinity GaAs photocathodes on integrated photosensitivity".applied surface science 252.12(2006):4104-4109.