Effect of Silicon-on-Insulator Substrate on Residual Strain in 3C-SiC Films

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	Effect of Silicon-on-Insulator Substrate on Residual Strain in 3C-SiC Films
	Wang Xiaofeng ; Huang Fengyi ; Sun Guosheng ; Wang Lei ; Zhao Wanshun ; Zeng Yiping ; Li Haiou ; Duan Xiaofeng
刊名	半导体学报
	2005
卷号	26 期号:9 页码:1681-1687
中文摘要	one group of sic films are grown on silicon-on-insulator （soi） substrates with a series of silicon-overlayer thickness. raman scattering spectroscopy measurement clearly indicates that a systematic trend of residual stress reduction as the silicon over-layer thickness decreases for the soi substrates. strain relaxation in the sic epilayer is explained by force balance approach and near coincidence lattice model.
学科主题	半导体材料
收录类别	CSCD
资助信息	国家高技术研究发展计划资助项目
语种	英语
公开日期	2010-11-23
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/16793]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wang Xiaofeng,Huang Fengyi,Sun Guosheng,et al. Effect of Silicon-on-Insulator Substrate on Residual Strain in 3C-SiC Films[J]. 半导体学报,2005,26(9):1681-1687.
APA	Wang Xiaofeng.,Huang Fengyi.,Sun Guosheng.,Wang Lei.,Zhao Wanshun.,...&Duan Xiaofeng.(2005).Effect of Silicon-on-Insulator Substrate on Residual Strain in 3C-SiC Films.半导体学报,26(9),1681-1687.
MLA	Wang Xiaofeng,et al."Effect of Silicon-on-Insulator Substrate on Residual Strain in 3C-SiC Films".半导体学报 26.9(2005):1681-1687.