The two- to three-dimensional growth transition of InAs/GaAs epitaxy layer studied by reflectance difference spectroscopy

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	The two- to three-dimensional growth transition of InAs/GaAs epitaxy layer studied by reflectance difference spectroscopy
	Zhou GY (Zhou G. Y.) ; Chen YH (Chen Y. H.) ; Tang CG (Tang C. G.) ; Liang LY (Liang L. Y.) ; Jin P (Jin P.) ; Wang ZG (Wang Z. G.)
刊名	journal of applied physics
	2010
卷号	108 期号:8 页码:art. no. 083513
关键词	QUANTUM-DOT SYSTEM ISLAND FORMATION IN-SITU EVOLUTION GAAS PHOTOLUMINESCENCE
通讯作者	zhou, gy, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. 电子邮箱地址: yhchen@red.semi.ac.cn
合作状况	其它
英文摘要	in this work, we have adopted reflectance difference spectroscopy to study the evolution of inas layer grown at different temperatures in gaas matrix. associated with the two- to three-dimensional growth transition of inas layer, the transition energies and the in-plane optical anisotropy of inas wetting layer exhibit abrupt changes. this provides a new way to decide the critical thickness h(c) for the growth transition. the obtained h(c)s are compared with those determined by atomic force microscope measurement, and discrepancy is found at high temperatures. the origin of the difference is clarified and the variations in hc with temperature are further discussed. (c) 2010 american institute of physics. [doi:10.1063/1.3494043]; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-12-05t04:16:25z no. of bitstreams: 1 the two- to three-dimensional growth transition of inas-gaas epitaxy layer studied by reflectance difference spectroscopy.pdf: 298939 bytes, checksum: 21b8ac88018f3ec567584683d381a8d1 (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-12-05t04:20:15z (gmt) no. of bitstreams: 1 the two- to three-dimensional growth transition of inas-gaas epitaxy layer studied by reflectance difference spectroscopy.pdf: 298939 bytes, checksum: 21b8ac88018f3ec567584683d381a8d1 (md5); made available in dspace on 2010-12-05t04:20:15z (gmt). no. of bitstreams: 1 the two- to three-dimensional growth transition of inas-gaas epitaxy layer studied by reflectance difference spectroscopy.pdf: 298939 bytes, checksum: 21b8ac88018f3ec567584683d381a8d1 (md5) previous issue date: 2010; the work was supported by the national natural science foundation of china (grant nos. 60625402 and 60990313) and the 973 program (grant nos. 2006cb604908 and 2006cb921607).; 其它
学科主题	半导体材料
收录类别	SCI
资助信息	the work was supported by the national natural science foundation of china (grant nos. 60625402 and 60990313) and the 973 program (grant nos. 2006cb604908 and 2006cb921607).
语种	英语
公开日期	2010-12-05
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/20659]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Zhou GY ,Chen YH ,Tang CG ,et al. The two- to three-dimensional growth transition of InAs/GaAs epitaxy layer studied by reflectance difference spectroscopy[J]. journal of applied physics,2010,108(8):art. no. 083513.
APA	Zhou GY ,Chen YH ,Tang CG ,Liang LY ,Jin P ,&Wang ZG .(2010).The two- to three-dimensional growth transition of InAs/GaAs epitaxy layer studied by reflectance difference spectroscopy.journal of applied physics,108(8),art. no. 083513.
MLA	Zhou GY ,et al."The two- to three-dimensional growth transition of InAs/GaAs epitaxy layer studied by reflectance difference spectroscopy".journal of applied physics 108.8(2010):art. no. 083513.