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The controllable electronic characteristics and Schottky barrier of graphene/GaP heterostructure via interlayer coupling and in-plane strain
期刊论文
Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 2022, 卷号: 284
作者:
Lu, Xuefeng
;
Li, Lingxia
;
Guo, Xin
;
Ren, Junqiang
;
Xue, Hongtao
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2022/08/09
Binding energy
Calculations
Gallium compounds
Graphene
Ground state
Heterojunctions
III-V semiconductors
Ohmic contacts
Schottky barrier diodes
Strain
Thermoelectric equipment
Van der Waals forces
Electronic characteristics
Graphene/GaP
In-plane strains
Interlayer coupling
Layer-spacing
Micro/nano
Nanoelectronic devices
P-type
Schottky barriers
Schottky contacts
Fermi-Level Depinning in Metal/Ge Junctions by Inserting a Carbon Nanotube Layer
期刊论文
SMALL, 2022, 页码: 7
作者:
Wei, Yu-Ning
;
Hu, Xian-Gang
;
Zhang, Jian-Wei
;
Tong, Bo
;
Du, Jin-Hong
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  |  
浏览/下载:36/0
  |  
提交时间:2022/07/14
carbon nanotube films
Fermi-level pinning
germanium
metal-induced gap states
ohmic contacts
Effects of vertical strain and electric field on the electronic properties and interface contact of graphene/InP vdW heterostructure
期刊论文
COMPUTATIONAL MATERIALS SCIENCE, 2021, 卷号: 198
作者:
Lu, Xuefeng
;
Li, Lingxia
;
Guo, Xin
;
Ren, Junqiang
;
Xue, Hongtao
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2021/10/14
Graphene
InP
Heterostructure
Vertical strain
Electric field
Schottky barrier
Turning electronic performance and Schottky barrier of graphene/β-Si3N4 (0001) heterostructure by external strain and electric field
期刊论文
Vacuum, 2021, 卷号: 188
作者:
Lu, Xuefeng
;
Li, Lingxia
;
Luo, Jianhua
;
Guo, Xin
;
Ren, Junqiang
收藏
  |  
浏览/下载:8/0
  |  
提交时间:2021/06/03
Optoelectronic devices
Schottky barrier diodes
Van der Waals forces
Electronic performance
Electronics devices
External strains
First principle calculations
Optoelectronics devices
P-type
Schottky barriers
Schottky contacts
Si$-3$/N$-4$
Van der Waal
Giant tunnel electroresistance in ferroelectric tunnel junctions with metal contacts to two-dimensional ferroelectric materials
期刊论文
PHYSICAL REVIEW B, 2021, 卷号: 103
作者:
Kang, Lili
;
Jiang, Peng
;
Hao, Hua
;
Zhou, Yanhong
;
Zheng, Xiaohong
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  |  
浏览/下载:57/0
  |  
提交时间:2021/06/15
Introducing Electrode Contact by Controlled Micro-Alloying in Few-Layered GaTe Field Effect Transistors
期刊论文
CRYSTALS, 2020, 卷号: 10, 期号: 3, 页码: 9
作者:
Xia, Xiuxin
;
Sun, Xingdan
;
Wang, Hanwen
;
Li, Xiaoxi
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  |  
浏览/下载:45/0
  |  
提交时间:2021/02/02
contact
alloying
GaTe
Pd electrode
Introducing Electrode Contact by Controlled Micro-Alloying in Few-Layered GaTe Field Effect Transistors
期刊论文
CRYSTALS, 2020, 卷号: 10, 期号: 3, 页码: 9
作者:
Xia, Xiuxin
;
Sun, Xingdan
;
Wang, Hanwen
;
Li, Xiaoxi
收藏
  |  
浏览/下载:33/0
  |  
提交时间:2021/02/02
contact
alloying
GaTe
Pd electrode
Comparison of optoelectrical characteristics between Schottky and Ohmic contacts to β-Ga2O3 thin film
期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2020, 卷号: 53, 期号: 8, 页码: 085105
作者:
Zeng Liu
;
Yusong Zhi
;
Shan Li
;
Yuanyuan Liu
;
;
Xiao Tang
;
Zuyong Yan
;
Peigang Li
;
Xiaohang Li
;
Daoyou Guo
;
Zhenping Wu
;
Weihua Tang
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2021/11/05
Influence of MoS2-metal interface on charge injection: a comparison between various metal contacts
期刊论文
NANOTECHNOLOGY, 2020, 卷号: 31, 期号: 39, 页码: 1-13
作者:
Li M(李萌)
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  |  
浏览/下载:15/0
  |  
提交时间:2020/08/22
MoS2
contact interface
KPFM
charge injection
Macroscopic Study on Current Transport Path in Front-Side Contacts of Crystalline Silicon Solar Cells
期刊论文
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2019
作者:
Xiong, Shenghu
;
Yuan, Xiao
;
Yang, Yunxia
;
Zhang, Jiefeng
;
Tong, Hua
收藏
  |  
浏览/下载:267/0
  |  
提交时间:2019/12/31
contact-end voltages
contact resistivities
current transport paths
solar cell metallization
transfer lengths
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