Giant tunnel electroresistance in ferroelectric tunnel junctions with metal contacts to two-dimensional ferroelectric materials

doi:10.1103/PhysRevB.103.125414

	Giant tunnel electroresistance in ferroelectric tunnel junctions with metal contacts to two-dimensional ferroelectric materials
	Kang, Lili 1,5; Jiang, Peng 1,5; Hao, Hua 5; Zhou, Yanhong 2; Zheng, Xiaohong 1,5; Zhang, Lei 3,4; Zeng, Zhi 5
刊名	PHYSICAL REVIEW B
	2021-03-15
卷号	103
ISSN号	2469-9950
DOI	10.1103/PhysRevB.103.125414
通讯作者	Zheng, Xiaohong(xhzheng@theory.issp.ac.cn)
英文摘要	Two-dimensional (2D) ferroelectric materials (FEMs) and their application in ferroelectric tunnel junctions (FTJs) have attracted a great deal of attention during the past several years due to their great potential in nonvolatile memory devices. Particularly, the all-2D FTJs, which have only atomic-layer thickness, have been demonstrated to show very high tunnel electroresistance (TER) ratio. Nevertheless, to better integrate with the present semiconductor technology, it is necessary to consider metal contacts in the construction of FTJs with 2D FEMs. However, due to the unknown interaction between traditional metals and 2D FEMs, it is not clear whether ferroelectricity still persists when the 2D FEMS are in contact with metals and whether the corresponding FTJs exhibit high TER effect as demanded for memory devices. To probe this, we construct FTJs with top contact between Au(010) and In2Se3, a 2D FEM with out-of-plane ferroelectric polarization. By density functional calculations combined with a nonequilibrium Green function technique, we find that not only the ferroelectricity still persists in the metal/FEM contact, but also a giant TER ratio as high as 104% is achieved. The giant TER arises from the change of the metal/FEM contact from a Schottky type to an Ohmic type accompanying with the ferroelectric polarization reversal. In the meantime, the tunnel barrier height between Au(010) and In2Se3 is zero, which means good ability of electron injection from metal to semiconductor and low contact resistance. Our study suggests that, by properly selecting the metal materials, giant TER ratio and high performance can be achieved in FTJs constructed with 2D FEMs and metal contacts.
资助项目	National Natural Science Foundation of China[11974355] ; National Natural Science Foundation of China[12074230] ; National Natural Science Foundation of China[11704232] ; National Natural Science Foundation of China[61764005] ; National Natural Science Foundation of China[11804093] ; National Key R&D Program of China[2017YFA0304203] ; Shanxi Province 100-Plan Talent Program ; Natural Science Foundation of Jiangxi Province[20181BAB201013] ; Natural Science Foundation of Jiangxi Province[20202ACBL212005] ; Natural Science Foundation of Jiangxi Provincial Education Department[GJJ180324] ; [1331KSC]
WOS关键词	MONOLAYER MOS2
WOS研究方向	Materials Science ; Physics
语种	英语
出版者	AMER PHYSICAL SOC
WOS记录号	WOS:000646178400008
资助机构	National Natural Science Foundation of China ; National Key R&D Program of China ; Shanxi Province 100-Plan Talent Program ; Natural Science Foundation of Jiangxi Province ; Natural Science Foundation of Jiangxi Provincial Education Department
内容类型	期刊论文
源URL	[http://ir.hfcas.ac.cn:8080/handle/334002/122372]
专题	中国科学院合肥物质科学研究院
通讯作者	Zheng, Xiaohong
作者单位	1.Univ Sci & Technol China, Grad Sch, Sci Isl Branch, Hefei 230026, Peoples R China 2.East China Jiao Tong Univ, Coll Sci, Nanchang 330013, Jiangxi, Peoples R China 3.Shanxi Univ, Inst Laser Spect, State Key Lab Quantum Opt & Quantum Opt Devices, Taiyuan 030006, Peoples R China 4.Shanxi Univ, Collaborat Innovat Ctr Extreme Opt, Taiyuan 030006, Peoples R China 5.Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Plivs, HFIPS, Hefei 230031, Peoples R China
推荐引用方式 GB/T 7714	Kang, Lili,Jiang, Peng,Hao, Hua,et al. Giant tunnel electroresistance in ferroelectric tunnel junctions with metal contacts to two-dimensional ferroelectric materials[J]. PHYSICAL REVIEW B,2021,103.
APA	Kang, Lili.,Jiang, Peng.,Hao, Hua.,Zhou, Yanhong.,Zheng, Xiaohong.,...&Zeng, Zhi.(2021).Giant tunnel electroresistance in ferroelectric tunnel junctions with metal contacts to two-dimensional ferroelectric materials.PHYSICAL REVIEW B,103.
MLA	Kang, Lili,et al."Giant tunnel electroresistance in ferroelectric tunnel junctions with metal contacts to two-dimensional ferroelectric materials".PHYSICAL REVIEW B 103(2021).