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Oxygen vacancies and local amorphization introduced by high fluence neutron irradiation in β-Ga
2
O
3
power diodes
期刊论文
APPLIED PHYSICS LETTERS, 2023, 卷号: 123
作者:
Liu, Jinyang
;
Han, Zhao
;
Ren, Lei
;
Yang, Xiao
;
Xu, Guangwei
收藏
  |  
浏览/下载:9/0
  |  
提交时间:2023/11/10
The controllable electronic characteristics and Schottky barrier of graphene/GaP heterostructure via interlayer coupling and in-plane strain
期刊论文
Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 2022, 卷号: 284
作者:
Lu, Xuefeng
;
Li, Lingxia
;
Guo, Xin
;
Ren, Junqiang
;
Xue, Hongtao
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2022/08/09
Binding energy
Calculations
Gallium compounds
Graphene
Ground state
Heterojunctions
III-V semiconductors
Ohmic contacts
Schottky barrier diodes
Strain
Thermoelectric equipment
Van der Waals forces
Electronic characteristics
Graphene/GaP
In-plane strains
Interlayer coupling
Layer-spacing
Micro/nano
Nanoelectronic devices
P-type
Schottky barriers
Schottky contacts
Regulation of UV light on the hot-electron current of Au/TiO2:Tb3+Schottky diodes
期刊论文
MATERIALS LETTERS, 2022, 卷号: 308
作者:
Liu, Shu Li
;
Fei, Guang Tao
;
Xia, Kai
;
Xu, Shao Hui
;
Gao, Xu Dong
收藏
  |  
浏览/下载:54/0
  |  
提交时间:2022/01/10
Semiconductors
Sensors
Doping
TiO 2
Barriers
Turning electronic performance and Schottky barrier of graphene/β-Si3N4 (0001) heterostructure by external strain and electric field
期刊论文
Vacuum, 2021, 卷号: 188
作者:
Lu, Xuefeng
;
Li, Lingxia
;
Luo, Jianhua
;
Guo, Xin
;
Ren, Junqiang
收藏
  |  
浏览/下载:8/0
  |  
提交时间:2021/06/03
Optoelectronic devices
Schottky barrier diodes
Van der Waals forces
Electronic performance
Electronics devices
External strains
First principle calculations
Optoelectronics devices
P-type
Schottky barriers
Schottky contacts
Si$-3$/N$-4$
Van der Waal
Effect of charge coupling on breakdown voltage of high voltage trench-gate-type super barrier rectifier
期刊论文
ACTA PHYSICA SINICA, 2021, 卷号: 70
作者:
Xu Da-Lin
;
Wang Yu-Qi
;
Li Xin-Hua
;
Shi Tong-Fei
收藏
  |  
浏览/下载:44/0
  |  
提交时间:2021/04/26
trench-gate-type super barrier rectifier
charge coupling
breakdown voltage
stepped oxide
Fe-Ion-Catalyzed Synthesis of CdSe/Cu Core/Shell Nanowires
期刊论文
INORGANIC CHEMISTRY, 2021, 卷号: 60, 期号: 4, 页码: 2614-2622
作者:
Chen, Mao
;
Xu, Lekai
;
Wang, Jiao
;
Liu, Baokun
;
Wang, Kun
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2021/08/31
Improved photocatalytic degradation and reduction performance of Bi2O3 by the decoration of AuPt alloy nanoparticles
期刊论文
Optical Materials, 2021, 卷号: 111
作者:
Xian, Tao
;
Sun, Xiaofeng
;
Di, Lijing
;
Li, Hongqin
;
Yang, Hua
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2021/03/02
Binary alloys
Biodegradation
Bismuth alloys
Bismuth compounds
Chemical detection
Chromium compounds
Complexation
Nanoparticles
Photocatalytic activity
Plasmons
Platinum alloys
Reduction
Schottky barrier diodes
Surface plasmon resonance
Au-pt alloy nanoparticles
Diffuse reflectance spectrum
Homogeneous distribution
Photo catalytic degradation
Photogenerated charge
Photoinduced electrons
Schottky barrier heights
XPS characterization
Recrystallization effects in GeV Bi ion implanted 4H-SiC Schottky barrier diode investigated by cross-sectional Micro-Raman spectroscopy
期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2020, 卷号: 478, 页码: 5-10
作者:
Huang, Mingmin
;
Yang, Zhimei
;
Wang, Shaomin
;
Liu, Jiyuan
;
Gong, Min
收藏
  |  
浏览/下载:26/0
  |  
提交时间:2021/12/15
Schottky barrier diodes
Raman spectroscopy
Recrystallization effect
Swift heavy ion
SiC
Polarity control and fabrication of lateral polarity structures of III-nitride thin films and devices: progress and prospects
期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2020, 卷号: 53, 期号: 48
作者:
Guo, Wei
;
Xu, Houqiang
;
Chen, Li
;
Yu, Huabin
;
Jiang, Jie'an
收藏
  |  
浏览/下载:127/0
  |  
提交时间:2020/12/16
INVERSION DOMAIN BOUNDARIES
MOLECULAR-BEAM EPITAXY
C-GAN DOMAINS
GALLIUM NITRIDE
N-POLARITY
2ND-HARMONIC GENERATION
SURFACE-MORPHOLOGY
GAAS FILMS
GROWTH
ALN
The Influence of Anode Trench Geometries on Electrical Properties of AlGaN/GaN Schottky Barrier Diodes
期刊论文
ELECTRONICS, 2020, 卷号: 9, 期号: 2, 页码: 282
作者:
Xiuxia Yang
;
Zhe Cheng
;
Zhiguo Yu
;
Lifang Jia
;
Lian Zhang
;
Yun Zhang
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2021/11/26
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