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CORC

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Flattening of low temperature epitaxial ge1-xsnx/ge/si(100) alloys via mass transport during post-growth annealing 期刊论文
Applied surface science, 2011, 卷号: 257, 期号: 9, 页码: 4468-4471
作者:  Wang, Wei;  Su, Shaojian;  Zheng, Jun;  Zhang, Guangze;  Xue, Chunlai
收藏  |  浏览/下载：121/0  |  提交时间：2019/05/12
Flattening of low temperature epitaxial Ge1-xSnx/Ge/Si(100) alloys via mass transport during post-growth annealing 期刊论文
applied surface science, 2011, 卷号: 257, 期号: 9, 页码: 4468-4471
Wang W; Su SJ; Zheng J; Zhang GZ; Xue CL; Zuo YH; Cheng BW; Wang QM
收藏  |  浏览/下载：97/7  |  提交时间：2011/07/05
The two- to three-dimensional growth transition of InAs/GaAs epitaxy layer studied by reflectance difference spectroscopy 期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 8, 页码: art. no. 083513
Zhou GY (Zhou G. Y.); Chen YH (Chen Y. H.); Tang CG (Tang C. G.); Liang LY (Liang L. Y.); Jin P (Jin P.); Wang ZG (Wang Z. G.)
收藏  |  浏览/下载：13/0  |  提交时间：2010/12/05
Strain evolution in GaN layers grown on high-temperature AlN interlayers 期刊论文
applied physics letters, 2006, 卷号: 89, 期号: 15, 页码: art.no.152105
Wang JF (Wang J. F.); Yao DZ (Yao D. Z.); Chen J (Chen J.); Zhu JJ (Zhu J. J.); Zhao DG (Zhao D. G.); Jiang DS (Jiang D. S.); Yang H (Yang H.); Liang JW (Liang J. W.)
收藏  |  浏览/下载：31/0  |  提交时间：2010/04/11
Electron g factors and optical properties of InAs quantum ellipsoids 期刊论文
journal of physics-condensed matter, 2006, 卷号: 18, 期号: 20, 页码: 4945-4954
Zhang XW; Zhu YH; Xia JB
收藏  |  浏览/下载：56/0  |  提交时间：2010/04/11
Finite element analysis of stress and strain distributions in InAs/GaAs quantum dots 期刊论文
chinese physics, 2006, 卷号: 15, 期号: 6, 页码: 1315-1319
Zhou WM; Wang CY; Chen YH; Wang ZG
收藏  |  浏览/下载：47/0  |  提交时间：2010/04/11
Surface morphology evolution of strained InAs/GaAs(331)a films 会议论文
2nd asian conference on nanoscience and nanotechnology, beijing, peoples r china, nov 24-27, 2004
Gong, M (Gong, Meng); Fang, ZD (Fang, Zhidan); Miao, ZH (Miao, Zhenhua); Niu, ZC (Niu, Zhichuan)
收藏  |  浏览/下载：118/36  |  提交时间：2010/03/29
Reduction of dislocations in GaN epilayer grown on Si (111) substrates using a GaN intermedial layer 期刊论文
chinese physics letters, 2006, 卷号: 23, 期号: 9, 页码: 2591-2594
Wang JF (Wang Jian-Feng); Zhang BS (Zhang Bao-Shun); Zhang JC (Zhang Ji-Cai); Zhu JJ (Zhu Jian-Jun); Wang YT (Wang Yu-Tian); Chen J (Chen Jun); Liu W (Liu Wei); Jiang DS (Jiang De-Sheng); Yao DZ (Yao Duan-Zheng); Yang H (Yang Hui)
收藏  |  浏览/下载：29/0  |  提交时间：2010/04/11
Electroluminescence afterglow from indium tin oxide/Si-rich SiO2/p-Si structure 期刊论文
chinese physics letters, 2006, 卷号: 23, 期号: 5, 页码: 1306-1309
Wang XX; Zhang JG; Cheng BW; Yu JZ; Wang QM
收藏  |  浏览/下载：54/0  |  提交时间：2010/04/11
Exact quantum master equation via the calculus on path integrals 期刊论文
journal of chemical physics, 2005, 卷号: 122, 期号: 4, 页码: art.no.041103
Xu RX; Cui P; Li XQ; Mo Y; Yan YJ
收藏  |  浏览/下载：21/0  |  提交时间：2010/03/17

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