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	Flattening of low temperature epitaxial ge1-xsnx/ge/si(100) alloys via mass transport during post-growth annealing
	Wang, Wei; Su, Shaojian; Zheng, Jun; Zhang, Guangze; Xue, Chunlai; Zuo, Yuhua; Cheng, Buwen; Wang, Qiming
刊名	Applied surface science
	2011-02-15
卷号	257期号:9页码:4468-4471
关键词	Germanium tin alloys Germanium buffer Surface morphology evolution Mass transport
ISSN号	0169-4332
DOI	10.1016/j.apsusc.2010.12.094
通讯作者	Cheng, buwen(cbw@semi.ac.cn)
英文摘要	Epitaxial ge1-xsnx alloys were grown on si(1 0 0) by mbe with a ge buffer layer. the ge buffer was grown by two step method using geh4 as gas source. the epitaxial layers were characterized by rutherford backscattering spectrometry (rbs), double crystal x-ray diffraction (dcxrd), and atomic force microscopy (afm) measurements. then the ge1-xsnx alloys were annealed at 500 degrees c for times ranging from 0 to 10 min. during the annealing process, the surface morphology evolution, from three-dimensional round mounds to nearly two-dimensional ripples, and finally to flat, was observed. this result can be attributed to mass transport by surface diffusion. (c) 2010 elsevier b. v. all rights reserved.
WOS关键词	SURFACE ; GROWTH ; EVOLUTION ; DECAY
WOS研究方向	Chemistry ; Materials Science ; Physics
WOS类目	Chemistry, Physical ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter
语种	英语
出版者	ELSEVIER SCIENCE BV
WOS记录号	WOS:000286459600108
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2428461
专题	半导体研究所
通讯作者	Cheng, Buwen
作者单位	Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Wang, Wei,Su, Shaojian,Zheng, Jun,et al. Flattening of low temperature epitaxial ge1-xsnx/ge/si(100) alloys via mass transport during post-growth annealing[J]. Applied surface science,2011,257(9):4468-4471.
APA	Wang, Wei.,Su, Shaojian.,Zheng, Jun.,Zhang, Guangze.,Xue, Chunlai.,...&Wang, Qiming.(2011).Flattening of low temperature epitaxial ge1-xsnx/ge/si(100) alloys via mass transport during post-growth annealing.Applied surface science,257(9),4468-4471.
MLA	Wang, Wei,et al."Flattening of low temperature epitaxial ge1-xsnx/ge/si(100) alloys via mass transport during post-growth annealing".Applied surface science 257.9(2011):4468-4471.

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