Surface morphology evolution of strained InAs/GaAs(331)a films

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	Surface morphology evolution of strained InAs/GaAs(331)a films
	Gong, M (Gong, Meng) ; Fang, ZD (Fang, Zhidan) ; Miao, ZH (Miao, Zhenhua) ; Niu, ZC (Niu, Zhichuan)
	2006
会议名称	2nd asian conference on nanoscience and nanotechnology
会议日期	nov 24-27, 2004
会议地点	beijing, peoples r china
关键词	surface morphology evolution InAs nanostructures island-pit pairs MOLECULAR-BEAM EPITAXY QUANTUM DOTS COOPERATIVE NUCLEATION HETEROEPITAXY TRANSITION ISLANDS GROWTH
页码	vol 5 no 6 5 (6): 883-888
通讯作者	gong, m, chinese acad sci, inst semicond, natl lab superlattices & microstruct, po box 912, beijing 100083, peoples r china.
中文摘要	surface morphology evolution of strained inas/gaas(331)a films was systematically investigated in this paper. under as-rich conditions, inas elongated islands aligned along [1 (1) over bar0] are formed at a substrate temperature of 510 degrees c. we explained it as a result of the anisotropic diffusion of adatoms. under in-rich conditions, striking change has occurred with respect to the surface morphology of the inas layers. instead of anisotropic inas elongated islands, unique island-pit pairs randomly distributed on the whole surface were observed. using cooperative nucleation mechanisms proposed by jesson et al. [phys. rev. lett. 77, 1330 (1996)], we interpret the resulting surface morphology evolution.
英文摘要	surface morphology evolution of strained inas/gaas(331)a films was systematically investigated in this paper. under as-rich conditions, inas elongated islands aligned along [1 (1) over bar0] are formed at a substrate temperature of 510 degrees c. we explained it as a result of the anisotropic diffusion of adatoms. under in-rich conditions, striking change has occurred with respect to the surface morphology of the inas layers. instead of anisotropic inas elongated islands, unique island-pit pairs randomly distributed on the whole surface were observed. using cooperative nucleation mechanisms proposed by jesson et al. [phys. rev. lett. 77, 1330 (1996)], we interpret the resulting surface morphology evolution.; zhangdi于2010-03-29批量导入; made available in dspace on 2010-03-29t06:06:08z (gmt). no. of bitstreams: 1 2261.pdf: 294089 bytes, checksum: ac20238093d45b9be342ae7aa243ba45 (md5) previous issue date: 2006; chinese acad sci, inst semicond, natl lab superlattices & microstruct, beijing 100083, peoples r china
收录类别	CPCI-S
会议录	international journal of nanoscience丛书标题: international journal of nanoscience series
会议录出版者	world scientific publ co pte ltd ; po box 128 farrer rd, singapore 9128, singapore
会议录出版地	po box 128 farrer rd, singapore 9128, singapore
学科主题	半导体物理
语种	英语
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/9820]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Gong, M ,Fang, ZD ,Miao, ZH ,et al. Surface morphology evolution of strained InAs/GaAs(331)a films[C]. 见:2nd asian conference on nanoscience and nanotechnology. beijing, peoples r china. nov 24-27, 2004.