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科研机构
半导体研究所 [16]
内容类型
期刊论文 [15]
会议论文 [1]
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2013 [1]
2011 [3]
2010 [4]
2009 [2]
2008 [1]
2001 [2]
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半导体材料 [6]
光电子学 [1]
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In situ accurate control of 2D-3D transition parameters for growth of low-density InAs/GaAs self-assembled quantum dots
期刊论文
nanoscale research letters, 2013, 卷号: 8, 期号: 1, 页码: 86
Li MF(李密锋)
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浏览/下载:11/0
  |  
提交时间:2013/06/03
InAs quantum dots
Sacrificed InAs layer
Molecular beam epitaxy
Reflection high-energy electron
Vi/ii ratio-dependent growth and photoluminescence of cubic cdse epilayers by molecular beam epitaxy
期刊论文
Journal of crystal growth, 2011, 卷号: 329, 期号: 1, 页码: 1-5
作者:
Zhao, Jie
;
Zeng, Yiping
;
Yang, Qiumin
;
Li, Yiyang
;
Cui, Lijie
收藏
  |  
浏览/下载:29/0
  |  
提交时间:2019/05/12
Reflection high-energy electron diffraction
X-ray diffraction
Atomic force microscopy
Molecular beam epitaxy
Cadmium compounds
Semiconducting ii-vi materials
Growth and annealing of zinc-blende cdse thin films on gaas (001) by molecular beam epitaxy
期刊论文
Applied surface science, 2011, 卷号: 257, 期号: 21, 页码: 9038-9043
作者:
Yang, Qiumin
;
Zhao, Jie
;
Guan, Min
;
Liu, Chao
;
Cui, Lijie
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  |  
浏览/下载:27/0
  |  
提交时间:2019/05/12
Cdse
Molecular beam epitaxy
Reflection high energy electron diffraction
X-ray diffraction
Atomic force microscopy
Structures and optical characteristics of InGaN quantum dots grown by MBE
期刊论文
xiyou jinshu cailiao yu gongcheng/rare metal materials and engineering, 2011, 卷号: 40, 期号: 11, 页码: 2030-2032
Wang, Baozhu
;
Yan, Cuiying
;
Wang, Xiaoliang
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  |  
浏览/下载:22/0
  |  
提交时间:2012/06/14
Atomic force microscopy
Gallium nitride
Molecular beam epitaxy
Optical materials
Optical properties
Reflection high energy electron diffraction
Sapphire
Optimization of vi/ii pressure ratio in znte growth on gaas(001) by molecular beam epitaxy
期刊论文
Applied surface science, 2010, 卷号: 256, 期号: 22, 页码: 6881-6886
作者:
Zhao, Jie
;
Zeng, Yiping
;
Liu, Chao
;
Cui, Lijie
;
Li, Yanbo
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  |  
浏览/下载:20/0
  |  
提交时间:2019/05/12
Znte
Molecular beam epitaxy
Reflection high-energy electron diffraction
X-ray diffraction
Atomic force microscopy
Substrate temperature dependence of znte epilayers grown on gaas(001) by molecular beam epitaxy
期刊论文
Journal of crystal growth, 2010, 卷号: 312, 期号: 9, 页码: 1491-1495
作者:
Zhao, Jie
;
Zeng, Yiping
;
Liu, Chao
;
Li, Yanbo
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2019/05/12
Reflection high-energy electron diffraction
Atomic force microscopy
Molecular beam epitaxy
Zinc compounds
Semiconducting ii-vi materials
Optimization of VI/II pressure ratio in ZnTe growth on GaAs(001) by molecular beam epitaxy
期刊论文
applied surface science, 2010, 卷号: 256, 期号: 22, 页码: 6881-6886
Zhao J (Zhao Jie)
;
Zeng YP (Zeng Yiping)
;
Liu C (Liu Chao)
;
Cui LJ (Cui Lijie)
;
Li YB (Li Yanbo)
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  |  
浏览/下载:159/17
  |  
提交时间:2010/07/05
ZnTe
Molecular beam epitaxy
Reflection high-energy electron diffraction
X-ray diffraction
Atomic force microscopy
VAPOR-PHASE EPITAXY
N-TYPE ZNTE
MBE GROWTH
100 GAAS
ZNSE
LAYERS
SURFACE
TEMPERATURE
SUBSTRATE
EPILAYERS
Substrate temperature dependence of ZnTe epilayers grown on GaAs(001) by molecular beam epitaxy
期刊论文
journal of crystal growth, 2010, 卷号: 312, 期号: 9, 页码: 1491-1495
Zhao J (Zhao Jie)
;
Zeng YP (Zeng Yiping)
;
Liu C (Liu Chao)
;
Li YB (Li Yanbo)
收藏
  |  
浏览/下载:148/33
  |  
提交时间:2010/06/04
Reflection high-energy electron diffraction
Atomic force microscopy
Molecular beam epitaxy
Zinc compounds
Semiconducting II-VI materials
Improvement in crystal quality of zno film on si substrate by using a homo-buffer layer
期刊论文
Materials science in semiconductor processing, 2009, 卷号: 12, 期号: 6, 页码: 233-237
作者:
Zhao, Jie
;
Hu, Lizhong
收藏
  |  
浏览/下载:32/0
  |  
提交时间:2019/05/12
Zno
Pulsed laser deposition
X-ray diffraction
Photoluminescence
Reflection high-energy electron diffraction
Improvement in crystal quality of ZnO film on Si substrate by using a homo-buffer layer
期刊论文
materials science in semiconductor processing, 2009, 卷号: 12, 期号: 6, 页码: 233-237
作者:
Zhao J
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浏览/下载:47/4
  |  
提交时间:2011/07/05
ZnO
Pulsed laser deposition
X-ray diffraction
Photoluminescence
Reflection high-energy electron diffraction
PULSED-LASER DEPOSITION
THIN-FILMS
PLD TECHNIQUE
GROWTH
SAPPHIRE
TEMPERATURE
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