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	Optimization of vi/ii pressure ratio in znte growth on gaas(001) by molecular beam epitaxy
	Zhao, Jie1,2; Zeng, Yiping1,2; Liu, Chao1,2; Cui, Lijie1,2; Li, Yanbo1,2
刊名	Applied surface science
	2010-09-01
卷号	256期号:22页码:6881-6886
关键词	Znte Molecular beam epitaxy Reflection high-energy electron diffraction X-ray diffraction Atomic force microscopy
ISSN号	0169-4332
DOI	10.1016/j.apsusc.2010.04.105
通讯作者	Zhao, jie(jiezhao@semi.ac.cn)
英文摘要	Znte epilayers were grown on gaas(0 0 1) substrates by molecular beam epitaxy (mbe) at different vi/ii beam equivalent pressure (bep) ratios (r(vi/ii)) in a wide range of 0.96-11 with constant zn flux. based on in situ reflection high-energy electron diffraction (rheed) observation, two-dimensional (2d) growth mode can be formed by increasing the r(vi/ii) to 2.8. the te/zn pressure ratios lower than 4.0 correspond to zn-rich growth state, while the ratios over 6.4 correspond to te-rich one. the zn sticking coefficient at various vi/ii ratios are derived by the growth rate measurement. the znte epilayer grown at a r(vi/ii) of 6.4 displays the narrowest full-width at half-maximum (fwhm) of double-crystal x-ray rocking curve (dcxrc) for (0 0 4) reflection. atomic force microscopy (afm) characterization shows that the grain size enlarges drastically with the r(vi/ii). the surface root-mean-square (rms) roughness decreases firstly, attains a minimum of 1.14 nm at a r(vi/ii) of 4.0 and then increases at higher ratios. it is suggested that the most suitable r(vi/ii) be controlled between 4.0 and 6.4 in order to grow high-quality znte epitaxial thin films. (c) 2010 elsevier b. v. all rights reserved.
WOS关键词	VAPOR-PHASE EPITAXY ; N-TYPE ZNTE ; MBE GROWTH ; 100 GAAS ; ZNSE ; LAYERS ; SURFACE ; TEMPERATURE ; SUBSTRATE ; EPILAYERS
WOS研究方向	Chemistry ; Materials Science ; Physics
WOS类目	Chemistry, Physical ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter
语种	英语
出版者	ELSEVIER SCIENCE BV
WOS记录号	WOS:000278908900066
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2428046
专题	半导体研究所
通讯作者	Zhao, Jie
作者单位	1.Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Ctr Mat Sci, Inst Semicond, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Zhao, Jie,Zeng, Yiping,Liu, Chao,et al. Optimization of vi/ii pressure ratio in znte growth on gaas(001) by molecular beam epitaxy[J]. Applied surface science,2010,256(22):6881-6886.
APA	Zhao, Jie,Zeng, Yiping,Liu, Chao,Cui, Lijie,&Li, Yanbo.(2010).Optimization of vi/ii pressure ratio in znte growth on gaas(001) by molecular beam epitaxy.Applied surface science,256(22),6881-6886.
MLA	Zhao, Jie,et al."Optimization of vi/ii pressure ratio in znte growth on gaas(001) by molecular beam epitaxy".Applied surface science 256.22(2010):6881-6886.

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