Structures and optical characteristics of InGaN quantum dots grown by MBE

	Structures and optical characteristics of InGaN quantum dots grown by MBE
	Wang, Baozhu ; Yan, Cuiying ; Wang, Xiaoliang
刊名	xiyou jinshu cailiao yu gongcheng/rare metal materials and engineering
	2011
卷号	40 期号:11 页码:2030-2032
关键词	Atomic force microscopy Gallium nitride Molecular beam epitaxy Optical materials Optical properties Reflection high energy electron diffraction Sapphire
ISSN号	1002185x
通讯作者	wang, b.(wangbz@semi.ac.cn)
学科主题	半导体材料
收录类别	EI
语种	中文
公开日期	2012-06-14
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/23043]
专题	半导体研究所_半导体材料科学中心
推荐引用方式 GB/T 7714	Wang, Baozhu,Yan, Cuiying,Wang, Xiaoliang. Structures and optical characteristics of InGaN quantum dots grown by MBE[J]. xiyou jinshu cailiao yu gongcheng/rare metal materials and engineering,2011,40(11):2030-2032.
APA	Wang, Baozhu,Yan, Cuiying,&Wang, Xiaoliang.(2011).Structures and optical characteristics of InGaN quantum dots grown by MBE.xiyou jinshu cailiao yu gongcheng/rare metal materials and engineering,40(11),2030-2032.
MLA	Wang, Baozhu,et al."Structures and optical characteristics of InGaN quantum dots grown by MBE".xiyou jinshu cailiao yu gongcheng/rare metal materials and engineering 40.11(2011):2030-2032.