Improvement in crystal quality of ZnO film on Si substrate by using a homo-buffer layer

	Improvement in crystal quality of ZnO film on Si substrate by using a homo-buffer layer
	Zhao J
刊名	materials science in semiconductor processing
	2009
卷号	12 期号:6 页码:233-237
关键词	ZnO Pulsed laser deposition X-ray diffraction Photoluminescence Reflection high-energy electron diffraction PULSED-LASER DEPOSITION THIN-FILMS PLD TECHNIQUE GROWTH SAPPHIRE TEMPERATURE
ISSN号	1369-8001
通讯作者	zhao, j, chinese acad sci, inst semicond, ctr mat sci, beijing 100083, peoples r china. jiezhao_sub@163.com
学科主题	半导体材料
收录类别	SCI
资助信息	national natural science foundation of china [60777009]; education department of liaoning province [20060131]
语种	英语
公开日期	2011-07-05 ; 2011-07-15
附注	zno thin films without and with a homo-buffer layer have been prepared on si(1 1 1) substrates by pulsed laser deposition (plo) under various conditions. photoluminescence (pl) measurement indicates that the optical quality of zno thin film is dramatically improved by introducing oxygen into the growth chamber. the sample deposited at 60 pa possesses the best optical properties among the oxygen pressure range studied. x-ray diffraction (xrd) results show that the films directly deposited on si are of polycrystalline zno structures. a low-temperature (500 degrees c) deposited zno buffer layer was used to enhance the crystal quality of the zno film. compared to the film without the buffer layer, the film with the buffer layer exhibits aligned spotty reflection high-energy electron diffraction (rheed) pattern and stronger near-band-edge emission (nbe) with a smaller full-width at half-maximum (fwhm) of 98 mev. the structural properties of zno buffer layers grown at different temperatures were investigated by rheed patterns. it is suggested that the present characteristics of the zno epilayer may be raised further by elevating the growth temperature of buffer layer to 600 degrees c. (c) 2009 elsevier ltd. all rights reserved.
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/20817]
专题	半导体研究所_半导体材料科学中心
推荐引用方式 GB/T 7714	Zhao J. Improvement in crystal quality of ZnO film on Si substrate by using a homo-buffer layer[J]. materials science in semiconductor processing,2009,12(6):233-237.
APA	Zhao J.(2009).Improvement in crystal quality of ZnO film on Si substrate by using a homo-buffer layer.materials science in semiconductor processing,12(6),233-237.
MLA	Zhao J."Improvement in crystal quality of ZnO film on Si substrate by using a homo-buffer layer".materials science in semiconductor processing 12.6(2009):233-237.