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华南理工大学 [49]

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	Broadband photoresponse arising from photo-bolometric effect in quasi-one-dimensional Ta2Ni3Se8 期刊论文 JOURNAL OF PHYSICS-CONDENSED MATTER, 2022, 卷号: 34 作者: Zhen, W. L.; Miao, W. T.; Zhu, W. L.; Zhang, C. J.; Zhu, W. K. 收藏 \| 浏览/下载：19/0 \| 提交时间：2022/12/23 narrow bandgap semiconductors optoelectronic devices infrared detectors optical communications
	Turning electronic performance and Schottky barrier of graphene/β-Si3N4 (0001) heterostructure by external strain and electric field 期刊论文 Vacuum, 2021, 卷号: 188 作者: Lu, Xuefeng; Li, Lingxia; Luo, Jianhua; Guo, Xin; Ren, Junqiang 收藏 \| 浏览/下载：9/0 \| 提交时间：2021/06/03 Optoelectronic devices Schottky barrier diodes Van der Waals forces Electronic performance Electronics devices External strains First principle calculations Optoelectronics devices P-type Schottky barriers Schottky contacts Si$-3$/N$-4$ Van der Waal
	Valley manipulation in monolayer transition metal dichalcogenides and their hybrid systems: status and challenges 期刊论文 Reports on Progress in Physics, 2021, 卷号: 84, 期号: 2 作者: Zhao,Siwen; Li,Xiaoxi; Dong,Baojuan; Wang,Huide; Wang,Hanwen 收藏 \| 浏览/下载：31/0 \| 提交时间：2021/10/15 valleytronics transition metal dichalcogenides (TMDs) optoelectronic devices hybrid heterostructures
	Ultra-wideband solar absorber based on refractory titanium metal 会议论文作者: Yu, Peiqi; Yang, Hua; Chen, Xifang; Yi, Zao; Yao, Weitang 收藏 \| 浏览/下载：10/0 \| 提交时间：2020/12/18 Absorption spectra Electromagnetic waves Magnetic materials Optoelectronic devices Plasmons Refractory materials Refractory metals Solar absorbers Solar radiation Surface plasmon resonance Titanium Ultra-wideband (UWB)Broadband absorption Electromagnetic environments Electromagnetic wave absorber High temperature condition Opto-electronic materials Titanium metals Wide spectrum
	Ultra-wideband solar absorber based on refractory titanium metal 期刊论文 Renewable Energy, 2020, 卷号: 158, 页码: 227-235 作者: Yu, Peiqi; Yang, Hua; Chen, Xifang; Yi, Zao; Yao, Weitang 收藏 \| 浏览/下载：3/0 \| 提交时间：2020/11/14 Absorption spectra Electromagnetic waves Magnetic materials Optoelectronic devices Plasmons Refractory materials Refractory metals Solar absorbers Solar radiation Surface plasmon resonance Titanium Ultra-wideband (UWB) Broadband absorption Electromagnetic environments Electromagnetic wave absorber High temperature condition Opto-electronic materials Titanium metals Wide spectrum
	Stretchable High-Permittivity Nanocomposites for Epidermal Alternating-Current Electroluminescent Displays 期刊论文 ACS Materials Letters, 2019, 卷号: 1, 期号: 5, 页码: 511-518 作者: Zhou, Yunlei; Zhao, Chaoshan; Wang, Jiachen; Li, Yanzhen; Li, Chenxin 收藏 \| 浏览/下载：4/0 \| 提交时间：2022/02/17 Current density Electric fields Electric impedance measurement Electroluminescence Energy harvesting Light emission Nanocomposites Permittivity Electroluminescent display Energy harvesting device Light emitting devices Mechanical deformability Optoelectronic properties Solution processability Stretchable electronics Wearable applications
	A Double Support Layer for Facile Clean Transfer of Two-Dimensional Materials for High-Performance Electronic and Optoelectronic Devices 期刊论文 ACS NANO, 2019, 卷号: 13, 期号: 5, 页码: 5513-5522 作者: Zhang, Dingdong; Du, Jinhong; Hong, Yi-Lun; Zhang, Weimin; Wang, Xiao 收藏 \| 浏览/下载：31/0 \| 提交时间：2021/02/02 rosin graphene 2D materials clean transfer optoelectronic devices
	A Double Support Layer for Facile Clean Transfer of Two-Dimensional Materials for High-Performance Electronic and Optoelectronic Devices 期刊论文 ACS Nano, 2019, 卷号: 13, 期号: 5, 页码: 5513-5522 作者: Liu LQ(刘连庆); Zhang, Dingdong; Du, Jinhong; Hong, Yi-Lun; Zhang, Weimin 收藏 \| 浏览/下载：94/0 \| 提交时间：2019/06/18 rosin graphene 2D materials clean transfer optoelectronic devices
	Versatile Doping Control of Black Phosphorus and Functional Junction Structures 期刊论文 JOURNAL OF PHYSICAL CHEMISTRY C, 2019, 卷号: 123, 页码: 10682-10688 作者: Jia, Jingyuan; Jeon, Sumin; Jeon, Jaeho; Park, Jin-Hong; Lee, Sungjoo 收藏 \| 浏览/下载：55/0 \| 提交时间：2019/12/02 Esters Ionic liquids Optoelectronic devices Phosphorus, Degenerate doping Doping techniques Electrical performance Electronic device Field effect transistor (FETs) Junction structure Lateral junctions Rectifying behaviors, Field effect transistors

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