Broadband photoresponse arising from photo-bolometric effect in quasi-one-dimensional Ta2Ni3Se8

doi:10.1088/1361-648X/ac638b

	Broadband photoresponse arising from photo-bolometric effect in quasi-one-dimensional Ta2Ni3Se8
	Zhen, W. L.1,2; Miao, W. T.1; Zhu, W. L.1; Zhang, C. J.1,3; Zhu, W. K.1
刊名	JOURNAL OF PHYSICS-CONDENSED MATTER
	2022-06-23
卷号	34
关键词	narrow bandgap semiconductors optoelectronic devices infrared detectors optical communications
ISSN号	0953-8984
DOI	10.1088/1361-648X/ac638b
通讯作者	Zhang, C. J.(zhangcj@hmfl.ac.cn) ; Zhu, W. K.(wkzhu@hmfl.ac.cn)
英文摘要	In this paper, we report the synthesis of high-quality Ta2Ni3Se8 crystals free of noble or toxic elements and the fabrication and testing of photodetectors on the wire samples. A broadband photoresponse from 405 nm to 1550 nm is observed, along with performance parameters including relatively high photoresponsivity (10 mA W-1) and specific detectivity (3.5 x 10(7) Jones) and comparably short response time (tau (rise) = 433 ms, tau (decay) = 372 ms) for 1064 nm, 0.5 V bias and 1.352 mW mm(-2). Through extensive measurement and analysis, it is determined that the dominant mechanism for photocurrent generation is the photo-bolometric effect, which is believed to be responsible for the very broad spectral detection capability. More importantly, the pronounced response to 1310 nm and 1550 nm wavelengths manifests its promising applications in optical communications. Considering the quasi-one-dimensional structure with layered texture, the potential to build nanodevices on Ta2Ni3Se8 makes it even more important in future electronic and optoelectronic applications.
资助项目	National Key R&D Program of China[2021YFA1600201] ; National Natural Science Foundation of China[11874363] ; National Natural Science Foundation of China[11974356] ; National Natural Science Foundation of China[U1932216] ; Anhui Province Laboratory of High Magnetic Field[AHHM-FX-2020-01]
WOS关键词	PHOTODETECTOR ARRAYS ; ULTRAVIOLET ; PHOTOTRANSISTORS ; FABRICATION ; NANOWIRES ; SIZE
WOS研究方向	Physics
语种	英语
出版者	IOP Publishing Ltd
WOS记录号	WOS:000787031100001
资助机构	National Key R&D Program of China ; National Natural Science Foundation of China ; Anhui Province Laboratory of High Magnetic Field
内容类型	期刊论文
源URL	[http://ir.hfcas.ac.cn:8080/handle/334002/131432]
专题	中国科学院合肥物质科学研究院
通讯作者	Zhang, C. J.; Zhu, W. K.
作者单位	1.Chinese Acad Sci, High Magnet Field Lab, Hefei 230031, Peoples R China 2.Univ Sci & Technol China, Hefei 230026, Peoples R China 3.Anhui Univ, Inst Phys Sci & Informat Technol, Hefei 230601, Peoples R China
推荐引用方式 GB/T 7714	Zhen, W. L.,Miao, W. T.,Zhu, W. L.,et al. Broadband photoresponse arising from photo-bolometric effect in quasi-one-dimensional Ta2Ni3Se8[J]. JOURNAL OF PHYSICS-CONDENSED MATTER,2022,34.
APA	Zhen, W. L.,Miao, W. T.,Zhu, W. L.,Zhang, C. J.,&Zhu, W. K..(2022).Broadband photoresponse arising from photo-bolometric effect in quasi-one-dimensional Ta2Ni3Se8.JOURNAL OF PHYSICS-CONDENSED MATTER,34.
MLA	Zhen, W. L.,et al."Broadband photoresponse arising from photo-bolometric effect in quasi-one-dimensional Ta2Ni3Se8".JOURNAL OF PHYSICS-CONDENSED MATTER 34(2022).