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期刊论文 [23]
会议论文 [6]
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Recent development of wide bandgap semiconductor SiC substrates and device [宽禁带碳化硅单晶衬底及器件研究进展]
期刊论文
Qiangjiguang Yu Lizishu/High Power Laser and Particle Beams, 2019, 卷号: 31, 期号: 4
作者:
Xiao L.
;
Xu X.
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2019/12/11
Device failure
Photoconductive semiconductor switch
Physical vapor transport method
Power device
Silicon carbide
Study on the destruction mechanism caused by dynamic avalanche in GCTs
期刊论文
2019, 卷号: 92, 页码: 34-41
作者:
Yang, Wuhua
;
Wang, Cailin
;
Yang, Jing
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2019/12/20
Power semiconductor device
Gate commutated thyristor
Dynamic avalanche
Current filament
Destruction mechanism
Phase-transition-induced large magnetic anisotropy change in VO2/(Co/Pt)(2) heterostructure
期刊论文
APPLIED PHYSICS LETTERS, 2019, 卷号: 114
作者:
Wei, Guodong
;
Lin, Xiaoyang
;
Si, Zhizhong
;
Lei, Na
;
Chen, Yanxue
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2019/12/30
Energy efficiency
Magnetism
Metal insulator boundaries
Metal insulator transition
Modulation
Platinum compounds
Semiconductor insulator boundaries
Vanadium dioxide
Energy density
Interfacial couplings
Interfacial strain
Low-power consumption
Modulation strategy
Perpendicular magnetic anisotropy
Spintronic device
Transition materials
Magnetic anisotropy
Paralleled GaN DHEMTs integrated cascode GaN switch for high-current applications
期刊论文
ELECTRONICS LETTERS, 2018, 卷号: 54, 页码: 899-900
作者:
Zhu, Tianhua
;
Zhuo, Fang
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2019/11/19
high-current applications
wire bonding
power density
avalanche-suppressed method
gallium compounds
GaN
integral package
lead bonding
single gate driver
field effect transistor switches
MOSFET
DHEMT integrated cascode switch
high electron mobility transistors
paralleled depletion-mode high-electron-mobility transistors
wide band gap semiconductors
cascode transistors
silicon-MOSFET
Si
potential unbalanced current sharing
cost reduction
optimised symmetric configuration
high-current cascode gallium nitride switch
III-V semiconductors
semiconductor device packaging
Research on Hybrid Reactive Power Compensation Switch Based on Vacuum Switch
会议论文
28th International Symposium on Discharges and Electrical Insulation in Vacuum, ISDEIV 2018, Greifswald, Germany, 2018-09-23
作者:
Zhu, Yu
;
Dong, Enyuan
;
Wang, Yongxing
;
Dong, Keqian
;
Liu, Jun
收藏
  |  
浏览/下载:26/0
  |  
提交时间:2019/12/02
Electric power systems
Electric power utilization
Electric switchgear
Reactive power
Semiconductor device models
Semiconductor materials
Switching, Controlled switching
Hybrid switch
Hybrid switching systems
Optimization modeling
Power electronic devices
Reactive power compensation
Switch technologies
Switching strategies, Electric switches
A novel multi-output high-voltage-isolated power supply system for semiconductor device series-connected switches
期刊论文
IEEJ TRANSACTIONS ON ELECTRICAL AND ELECTRONIC ENGINEERING, 2017, 卷号: 12, 期号: [db:dc_citation_issue], 页码: 608-614
作者:
Hou, Zhe
;
Li, Hongjie
;
Zhu, Chunyang
;
Sun, Haojie
;
Zhu, Mengxin
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/12/02
multi-output power supply system
semiconductor device
series-connected switch
flyback topology
High-voltage isolation
Study of the Lifetime of High-Power GaAs PCSSs Under Different Energy Storage Modes
期刊论文
2017, 卷号: 32, 页码: 4644-4651
作者:
Ma, Cheng
;
Yang, Lei
;
Wang, Shaoqiang
;
Ji, Yu
;
Zhang, Lin
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2019/12/20
Power semiconductor switches
semiconductor device breakdown
semiconductor device reliability
semiconductor device thermal factors
semiconductor switches
Analysis of the dynamic avalanche of carrier stored trench bipolar transistor (CSTBT) during clamped inductive turn-off transient
期刊论文
SOLID-STATE ELECTRONICS, 2017, 卷号: 129, 页码: 35-43
作者:
Xue, Peng
;
Fu, Guicui
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2019/12/30
CSTBT
Negative gate capacitance
Dynamic avalanche
IGBT
Power semiconductor device
High power microwave effect of electrostatic discharge type GGMOS protection device
期刊论文
Qiangjiguang Yu Lizishu/High Power Laser and Particle Beams, 2016, 卷号: 28
作者:
Huang, Zhijuan
;
Liu, Meiqin
;
Gong, Ding
;
Li, Yong
;
Yang, Zhiqiang
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2019/11/26
Electrostatic discharge device
High power microwave
MOSFET
Numerical simulation
Semiconductor
Research on the Failure Mechanism of High-Power GaAs PCSS
期刊论文
2015, 卷号: 30, 页码: 2427-2434
作者:
Shi, Wei
;
Ma, Cheng
;
Li, Mengxia
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/12/20
Power semiconductor switches
semiconductor device breakdown
semiconductor device reliability
semiconductor device thermal factors
semiconductor switches
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