| Analysis of the dynamic avalanche of carrier stored trench bipolar transistor (CSTBT) during clamped inductive turn-off transient | |
| Xue, Peng; Fu, Guicui | |
| 刊名 | SOLID-STATE ELECTRONICS
 |
| 2017 | |
| 卷号 | 129页码:35-43 |
| 关键词 | CSTBT Negative gate capacitance Dynamic avalanche IGBT Power semiconductor device |
| ISSN号 | 0038-1101 |
| DOI | 10.1016/j.sse.2016.12.002 |
| URL标识 | 查看原文 |
| 收录类别 | SCIE ; EI |
| WOS记录号 | WOS:000394402800007 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/5941783 |
| 专题 | 北京航空航天大学 |
| 推荐引用方式 GB/T 7714 | Xue, Peng,Fu, Guicui. Analysis of the dynamic avalanche of carrier stored trench bipolar transistor (CSTBT) during clamped inductive turn-off transient[J]. SOLID-STATE ELECTRONICS,2017,129:35-43. |
| APA | Xue, Peng,&Fu, Guicui.(2017).Analysis of the dynamic avalanche of carrier stored trench bipolar transistor (CSTBT) during clamped inductive turn-off transient.SOLID-STATE ELECTRONICS,129,35-43. |
| MLA | Xue, Peng,et al."Analysis of the dynamic avalanche of carrier stored trench bipolar transistor (CSTBT) during clamped inductive turn-off transient".SOLID-STATE ELECTRONICS 129(2017):35-43. |
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