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北京大学 [6]
华南理工大学 [6]
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兰州大学 [2]
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期刊论文 [16]
会议论文 [8]
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The Impact of Ferroelectric FETs on Digital and Analog Circuits and Architectures
期刊论文
IEEE DESIGN & TEST, 2020, 卷号: 37, 期号: 1, 页码: 79-99
作者:
Chen, Xiaoming
;
Sun, Xiaoyu
;
Wang, Panni
;
Datta, Suman
;
Hu, Xiaobo Sharon
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2020/12/10
Iron
Transistors
Computer architecture
Switches
Capacitance
Logic gates
Computational modeling
Ferroelectric Field Effect Transistor
FeFET
Negative Capacitance Field Effect Transistor
NCFET
Preisach model
FPGAs
content addressable memories
CAM
TCAM
compute-in-memory
analog synapse
Investigation of Total-Ionizing Dose Effects on the Two-Dimensional Transition Metal Dichalcogenide Field-Effect Transistors
期刊论文
IEEE Access, 2019, 卷号: Vol.7, 页码: 79989-79996
作者:
Shuyun Zheng
;
Yun Zeng
;
Zhuojun Chen
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2019/12/13
Field effect transistors
Semiconductor device modeling
Degradation
Electric potential
Logic gates
Molybdenum
Transition metal dichalcogenide (TMD)
field-effect transistor (FET)
total ionizing dose (TID)
surface potential
compact model
Enhancement of Negative Differential Mobility Effect in Recessed Barrier Layer AlGaN/GaN HEMT for Terahertz Applications
期刊论文
IEEE Transactions on Electron Devices, 2019, 卷号: Vol.66 No.3, 页码: 1236-1242
作者:
Hongliang Zhao
;
Lin-An Yang
;
Hao Zou
;
Xiao-hua Ma
;
Yue Hao
收藏
  |  
浏览/下载:36/0
  |  
提交时间:2019/12/17
HEMTs
Wide band gap semiconductors
Aluminum gallium nitride
Logic gates
Oscillators
Mathematical model
Schottky diodes
AlGaN/GaN
electron domain
high-electron mobility transistor (HEMT)
recessed barrier layer (RBL)
terahertz
Eco-Friendly, Water-Induced IN₂O₃ Thin Films for High-Performance Thin-Film Transistors and Inverters
期刊论文
IEEE Transactions on Electron Devices, 2018, 页码: 1-7
作者:
Jianguo Lv
;
Li Zhu
;
Bing Yang
;
Gang He
;
Yuting Long
收藏
  |  
浏览/下载:9/0
  |  
提交时间:2019/04/22
Dielectrics
Annealing
Logic
gates
Thin
film
transistors
Indium
Inverters
Surface
morphology
Environmentally
friendly
aqueous
solution
method
high-k
inverter
thin-film
transistor
water-induced
indium
oxide.
Eco-Friendly, Water-Induced In2O3 Thin Films for High-Performance Thin-Film Transistors and Inverters
期刊论文
IEEE Transactions on Electron Devices, 2018, 卷号: Vol.65 No.7, 页码: 2870-2876
作者:
Zhu, L
;
He, G
;
Long, YT
;
Lv, JG
;
Yang, B
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2019/04/24
Dielectrics
Annealing
Logic gates
Thin film transistors
Indium
Inverters
Surface morphology
Environmentally friendly aqueous solution method
high-k
inverter
thin-film transistor
water-induced indium oxide
Complementary Integrated Circuits Based on p-Type SnO and n-Type IGZO Thin-Film Transistors
期刊论文
IEEE ELECTRON DEVICE LETTERS, 2018, 卷号: 39, 期号: 2, 页码: 208-211
作者:
Li, Yunpeng
;
Yang, Jin
;
Wang, Yiming
;
Ma, Pengfei
;
Yuan, Yvzhuo
收藏
  |  
浏览/下载:8/0
  |  
提交时间:2019/12/11
Complementary inverter
logic gates
ring oscillator
tin monoxide
(SnO)
indium-gallium-zinc-oxide (IGZO)
thin-film transistor (TFT)
A Wearable Piezoelectric Energy Harvester Rectified by a Dual-Gate Thin-Film Transistor
期刊论文
IEEE Transactions on Electron Devices, 2018, 卷号: Vol.65 No.2, 页码: 542-546
作者:
EmadIranmanesh
;
AhmedRasheed
;
KaiWang
;
WeiweiLi
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2019/12/24
Thin
film
transistors
Logic
gates
Threshold
voltage
Force
Capacitance
Equivalent
circuits
Information
technology
Dual-gate
thin-film
transistor
piezoelectric
energy
harvester
wearable
electronics
Multi-valued logic design methodology with double negative differential resistance transistors
期刊论文
MICRO & NANO LETTERS, 2017, 卷号: 12, 期号: 10
作者:
Ji, Yuchao
;
Chang, Sheng
;
Wang, Hao
;
Huang, Qijun
;
He, Jin
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2019/12/05
logic gates
negative resistance circuits
field effect transistors
adders
multivalued logic design methodology
binary logic
logic density
circuit structure
double negative differential resistance field effect transistor
monostable-multistable transition logic element
MMLE
MVL
ternary logic gates
ternary four-input full adder
function circuits
binary circuit
ternary circuit
information load ability
Performance projections for ballistic carbon nanotube FinFET at circuit level
期刊论文
NANO RESEARCH, 2016
Zhang, Panpan
;
Qiu, Chenguang
;
Zhang, Zhiyong
;
Ding, Li
;
Chen, Bingyan
;
Peng, Lianmao
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2017/12/03
carbon nanotube
fin field-effect transistor (FinFET)
integrated circuits
multi-threshold voltage
FIELD-EFFECT TRANSISTORS
INTEGRATED-CIRCUITS
ON/OFF RATIO
LOGIC GATES
DEVICES
DIELECTRICS
MODEL
Modularized Construction of General Integrated Circuits on Individual Carbon Nanotubes
期刊论文
nano letters, 2014
Pei, Tian
;
Zhang, Panpan
;
Zhang, Zhiyong
;
Qiu, Chenguang
;
Liang, Shibo
;
Yang, Yingjun
;
Wang, Sheng
;
Peng, Lian-Mao
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2015/11/11
Carbon nanotube
field-effect transistor
integrated circuits
FIELD-EFFECT TRANSISTORS
NANOWIRE HETEROSTRUCTURES
GRAPHENE NANORIBBONS
LOGIC GATES
ELECTRONICS
SINGLE
PERFORMANCE
GROWTH
DEVICES
ARRAYS
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